Electronic states and shape of silicon quantum dots

doi:10.1088/1674-1056/22/6/064207

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 64207-064207.doi: 10.1088/1674-1056/22/6/064207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Electronic states and shape of silicon quantum dots

黄伟其, 苗信建, 黄忠梅, 陈汉琼, 苏琴

Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China

收稿日期:2012-08-14 修回日期:2012-10-10 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60966002 and 11264007) and the National Key Laboratory of Surface Physics in Fudan University, China.

Electronic states and shape of silicon quantum dots

Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴)

Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China

Received:2012-08-14 Revised:2012-10-10 Online:2013-05-01 Published:2013-05-01
Contact: Huang Wei-Qi E-mail:WQHuang2001@yahoo.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60966002 and 11264007) and the National Key Laboratory of Surface Physics in Fudan University, China.

摘要/Abstract

摘要： A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.

关键词: Si quantum dots, curved surface effect, surface bonds, localized levels

Abstract: A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.

Key words: Si quantum dots, curved surface effect, surface bonds, localized levels

中图分类号: (Lasers)

42.55.-f

68.65.Hb (Quantum dots (patterned in quantum wells)) 78.45.+h (Stimulated emission) 78.55.Mb (Porous materials)

黄伟其, 苗信建, 黄忠梅, 陈汉琼, 苏琴. Electronic states and shape of silicon quantum dots[J]. 中国物理B, 2013, 22(6): 64207-064207.

Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴). Electronic states and shape of silicon quantum dots[J]. Chin. Phys. B, 2013, 22(6): 64207-064207.

参考文献 11

[1]	Fowler A 1997 Phys. Today 50 50
[2]	Hirschman K D, Tsybeskov L, Duttagupta S P and Fauchet P M 1996 Nature 384 338
[3]	Fauchet P M, Ruan J, Chen H, Chen L, Negro L D, Cazzaneli M, Elliman R G, Smith N, Smoc M and Luther-Davies B 2005 Opt. Mater. 27 745
[4]	Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R and Qin C J 2008 Appl. Phys. Lett. 92 221910
[5]	Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L and Lozzi L 2008 Phys. Rev. B 78 245425
[6]	Wolkin M V, Jorne J and Fauchet P M 1999 Phys. Rev. Lett. 82 197
[7]	Hadjisavvas G, Remediakis I N and Kelires P C 2006 Phys. Rev. B 74 165419
[8]	Cruz M, Wang C, Beltra'n M R, and Taguënã-Martínez J 1996 Phys. Rev. B 53 3828
[9]	Huang W Q, Xu L and Wu K Y 2007 J. Appl. Phys. 102 053517
[10]	Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R and Qin C J 2008 Opt. Commun. 281 5229
[11]	Yang Y, Wang C, Yang R D, Li L, Xiong F and Bao J M 2009 Chin. Phys. B 18 4906

Electronic states and shape of silicon quantum dots

Electronic states and shape of silicon quantum dots

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 11

相关文章 2

Metrics

本文评价

推荐阅读 0

[1]	黄伟其, 尹君, 周年杰, 黄忠梅, 苗信建, 陈汉琼, 苏琴, 刘世荣, 秦朝建. Curved surface effect and emission on silicon nanostructures[J]. 中国物理B, 2013, 22(10): 104204-104204.
[2]	黄伟其, 陈汉琼, 苏琴, 刘世荣, 秦朝建. Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser[J]. 中国物理B, 2012, 21(6): 64209-064209.