中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47703-047703.doi: 10.1088/1674-1056/26/4/047703

所属专题： TOPICAL REVIEW — ZnO-related materials and devices

• TOPICAL REVIEW—ZnO-related materials and devices • 上一篇    下一篇

ZnO-based deep-ultraviolet light-emitting devices

Ying-Jie Lu(卢英杰), Zhi-Feng Shi(史志锋), Chong-Xin Shan(单崇新), De-Zhen Shen(申德振)   

  1. 1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
  • 收稿日期:2016-10-22 修回日期:2016-11-27 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Chong-Xin Shan E-mail:shancx@ciomp.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

ZnO-based deep-ultraviolet light-emitting devices

Ying-Jie Lu(卢英杰)1, Zhi-Feng Shi(史志锋)1, Chong-Xin Shan(单崇新)1,2, De-Zhen Shen(申德振)2   

  1. 1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
  • Received:2016-10-22 Revised:2016-11-27 Online:2017-04-05 Published:2017-04-05
  • Contact: Chong-Xin Shan E-mail:shancx@ciomp.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

RichHTML

0

PDF (PC)

605

赞

摘要：

Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn1-xO and BexZn1-xO alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.

关键词: ZnO, deep-ultraviolet light-emitting devices, MgxZn1-xO, BexZn1-xO

Abstract:

Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn1-xO and BexZn1-xO alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.

Key words: ZnO, deep-ultraviolet light-emitting devices, MgxZn1-xO, BexZn1-xO

中图分类号:  (ZnO)

  • 77.55.hf
78.45.+h (Stimulated emission) 78.60.Fi (Electroluminescence) 85.60.Jb (Light-emitting devices)