Curved surface effect and emission on silicon nanostructures

doi:10.1088/1674-1056/22/10/104204

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 104204-104204.doi: 10.1088/1674-1056/22/10/104204

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Curved surface effect and emission on silicon nanostructures

黄伟其, 尹君, 周年杰, 黄忠梅, 苗信建, 陈汉琼, 苏琴, 刘世荣, 秦朝建

Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China

收稿日期:2013-03-16 修回日期:2013-03-30 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11264007).

Curved surface effect and emission on silicon nanostructures

Huang Wei-Qi (黄伟其), Yin Jun (尹君), Zhou Nian-Jie (周年杰), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Cheng Han-Qiong (陈汉琼), Su Qin (苏琴), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建)

Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China

Received:2013-03-16 Revised:2013-03-30 Online:2013-08-30 Published:2013-08-30
Contact: Huang Wei-Qi E-mail:sci.wqhuang@gzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11264007).

摘要/Abstract

摘要： The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as L_N, L_NO, L_O1, and L_O2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the L_Yb line of electroluminescence (EL) emission.

关键词: silicon nanostructures, curved surface effect, characteristic line, localized states

Abstract: The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as L_N, L_NO, L_O1, and L_O2 lines in PL spectra due to Si–N, Si–NO, Si=O, and Si–O–Si bonds on curved surface, respectively. Si–Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the L_Yb line of electroluminescence (EL) emission.

Key words: silicon nanostructures, curved surface effect, characteristic line, localized states

中图分类号: (Lasers)

42.55.-f

68.65.Hb (Quantum dots (patterned in quantum wells)) 78.45.+h (Stimulated emission) 78.55.Mb (Porous materials)

黄伟其, 尹君, 周年杰, 黄忠梅, 苗信建, 陈汉琼, 苏琴, 刘世荣, 秦朝建. Curved surface effect and emission on silicon nanostructures[J]. 中国物理B, 2013, 22(10): 104204-104204.

Huang Wei-Qi (黄伟其), Yin Jun (尹君), Zhou Nian-Jie (周年杰), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Cheng Han-Qiong (陈汉琼), Su Qin (苏琴), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建). Curved surface effect and emission on silicon nanostructures[J]. Chin. Phys. B, 2013, 22(10): 104204-104204.

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Curved surface effect and emission on silicon nanostructures

Curved surface effect and emission on silicon nanostructures

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