中国物理B ›› 2011, Vol. 20 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/20/6/068502

• • 上一篇    下一篇

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

邓泽华1, 刘纪美1, 邓小芳2, 李海鸥3, 黄伟4   

  1. (1)Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China; (2)Information and Communication College, Guilin University of Electronic Technology, Guilin 541004, China; (3)Information and Communication College, Guilin University of Electronic Technology, Guilin 541004, China; Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China; (4)The 58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214061, China
  • 收稿日期:2010-12-27 修回日期:2011-01-14 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by CERG Grant (615506) from the Research Grants Council of Hong Kong Special Administrative Region of China and Intel Corporation, Science and Technology Plan of the Education Bureau of Guangxi Zhuang Autonomous Region of China (Grant No. 200911MS93).

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

Li Hai-Ou(李海鸥)a)c)†, Huang Wei(黄伟) b), Tang Chak Wah(邓泽华)c), Deng Xiao-Fang(邓小芳)a), and Lau Kei May(刘纪美) c)   

  1. a Information and Communication College, Guilin University of Electronic Technology, Guilin 541004, China; b The 58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214061, China;  cDepartment of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Received:2010-12-27 Revised:2011-01-14 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by CERG Grant (615506) from the Research Grants Council of Hong Kong Special Administrative Region of China and Intel Corporation, Science and Technology Plan of the Education Bureau of Guangxi Zhuang Autonomous Region of China (Grant No. 200911MS93).

PDF (PC)

935

赞

摘要： The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ωmm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

关键词: GaAs, metamorphic, high electron mobility transistor, metal-organic chemical vapour deposition

Abstract: The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ωmm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

Key words: GaAs, metamorphic, high electron mobility transistor, metal-organic chemical vapour deposition

中图分类号:  (Field effect devices)

  • 85.30.Tv
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))