中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37306-037306.doi: 10.1088/1674-1056/20/3/037306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
焦宝臣, 张晓丹, 魏长春, 孙建, 倪牮, 赵颖
Jiao Bao-Chen(焦宝臣),Zhang Xiao-Dan(张晓丹)†, Wei Chang-Chun(魏长春), Sun Jian(孙建), Ni Jian(倪牮),and Zhao Ying(赵颖)
摘要: Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10-3Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10-3Ω·cm ) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.
中图分类号: (II-VI semiconductors)