Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

doi:10.1088/1674-1056/20/3/037306

中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37306-037306.doi: 10.1088/1674-1056/20/3/037306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

焦宝臣, 张晓丹, 魏长春, 孙建, 倪牮, 赵颖

Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

收稿日期:2010-07-20 修回日期:2010-11-29 出版日期:2011-03-15 发布日期:2011-03-15
基金资助:
Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500), the National Basic Research Program of China (Grant Nos. 2011CB

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Jiao Bao-Chen(焦宝臣),Zhang Xiao-Dan(张晓丹)^†, Wei Chang-Chun(魏长春), Sun Jian(孙建), Ni Jian(倪牮),and Zhao Ying(赵颖)

Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

Received:2010-07-20 Revised:2010-11-29 Online:2011-03-15 Published:2011-03-15
Supported by:
Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500), the National Basic Research Program of China (Grant Nos. 2011CB201605 and 2011CB201606), the National Natural Science Foundation of China (Grant No. 60976051), International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

摘要/Abstract

摘要： Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10^-3Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10^-3Ω·cm ) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.

Abstract: Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10^-3Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10^-3Ω·cm ) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.

Key words: indium doped zinc oxide thin film, ultrasonic spray pyrolysis, double-layer structure, solar cell

中图分类号: (II-VI semiconductors)

73.61.Ga

88.40.jj (Silicon solar cells)

焦宝臣, 张晓丹, 魏长春, 孙建, 倪牮, 赵颖. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis[J]. 中国物理B, 2011, 20(3): 37306-037306.

Jiao Bao-Chen(焦宝臣),Zhang Xiao-Dan(张晓丹), Wei Chang-Chun(魏长春), Sun Jian(孙建), Ni Jian(倪牮),and Zhao Ying(赵颖) . Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis[J]. Chin. Phys. B, 2011, 20(3): 37306-037306.

参考文献 19

[1]	Look D C 2001 Mater. Sci. Eng. B 80 383
[2]	Han X Y, Hou G F, Wei C C, Zhang X D, Dai Z H, Li G J, Sun J, Chen X L, Zhang D K, Xue J M, Zhao Y and Gen X H 2009 Acta Phys. Sin. 58 4254 (in Chinese)
[3]	Zhang X D, Zhao Y, Sun F H, Wang S F, Han X Y, Wei C C, Sun J, Geng X H and Xiong S Z 2009 Acta Phys. Sin. 58 5041 (in Chinese)
[4]	Zhang X D, Zhao Y, Gao Y T, Chen F, Zhu F, Wei C C, Sun J, Geng X H and Xiong S Z 2006 Acta Phys. Sin. 55 6697 (in Chinese)
[5]	Fay S, Steinhauser J, Nicolay S and Ballif C 2010 Thin Solid Films 518 2961
[6]	Fay S, Feitknecht L, Schluchter R, Kroll U, Vallat-Sauvain E and Shah A 2006 Sol. Energy Mater. Sol. Cells 90 2960
[7]	Chen X L, Geng X H, Xue J M, Zhang D K, Hou G F and Zhao Y 2006 J. Cryst. Growth 296 43
[8]	Chen X L, Xu B H, Xue J M, Zhao Y, Wei C C, Sun J, Wang Y, Zhang X D and Geng X H 2007 Thin Solid Films 515 3753
[9]	Anna Selvana J A, Delahoy A E, Guo S and Li Y M 2006 Sol. Energy Mater. Sol. Cells 90 3371
[10]	Duenow J N, Gessert T A, Wood D M, Young D L and Coutts T J 2008 J. Non-Cryst Solids 354 2787
[11]	Lucio-Lopez M A, Luna-Arias M A, Maldonado A, Olvera M de la L and Acosta D R 2006 Sol. Energy Mater. Sol. Cells 90 733
[12]	Lee C, Lim K and Song J 1996 Sol. Energy Mater. Sol. Cells 43 37
[13]	Benouis C E, Benhaliliba M, Juarez A S, Aida M S, Chami F and Yakuphanoglu F 2010 J. Alloy Compd. 490 62
[14]	Wienke J and Booij A S 2008 Thin Solid Films 516 4508
[15]	Wienke J, van der Zanden B, Tijssen M and Zeman M 2008 it Sol. Energy Mater. Sol. Cells 92 884
[16]	Olvera M de la L, Maldonado A, Asomoza R and Melendez-Lira M 2002 Sol. Energy Mater. Sol. Cells 71 61
[17]	Maldonado A, Asomoza R, Canetas-Ortega J, Zironi E P Hernandez R, Patino R and Solorza-Feria O 1999 Sol. Energy Mater. Sol. Cells 57 331
[18]	Analytical Chemistry staff room of Hangzhou University 1997 Handbook of Analytical Chemistry (the first volumes: Basic and Safety knowledge) (2nd ed) (Beijing: Chemical Industry Press) p160 (in Chinese)
[19]	M"uller J, Rech B, Springer J and Vanecek M 2004 Sol. Energy 77 917

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xin Zhao(赵昕), Xuanwei Zhao(赵轩为), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Electron delocalization enhances the thermoelectric performance of misfit layer compound (Sn_1-xBi_xS)_1.2(TiS₂)₂[J]. 中国物理B, 2022, 31(11): 117202-117202.
[2]	Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector[J]. 中国物理B, 2021, 30(8): 87303-087303.
[3]	郭玉, 查钢强, 李颖锐, 谭婷婷, 朱昊, 吴森. Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor[J]. 中国物理B, 2019, 28(11): 117201-117201.
[4]	霍文星, 梅增霞, 卢毅成, 韩祖银, 朱锐, 王涛, 隋妍心, 梁会力, 杜小龙. Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors[J]. 中国物理B, 2019, 28(8): 87302-087302.
[5]	覃愿, 龙世兵, 董航, 何启鸣, 菅光忠, 张颖, 侯小虎, 谭鹏举, 张中方, 吕杭炳, 刘琦, 刘明. Review of deep ultraviolet photodetector based on gallium oxide[J]. 中国物理B, 2019, 28(1): 18501-018501.
[6]	Z K Zhang, W W Pan, J L Liu, W Lei. A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates[J]. 中国物理B, 2019, 28(1): 18103-018103.
[7]	郭榕榕, 徐亚东, 查钢强, 王涛, 介万奇. Temporal pulsed x-ray response of CdZnTe:In detector[J]. 中国物理B, 2018, 27(12): 127202-127202.
[8]	刘妮, 李淑鑫, 叶迎春, 姚延立. Enhanced performance of a solar cell based on a layer-by-layer self-assembled luminescence down-shifting layer of core-shell quantum dots[J]. 中国物理B, 2018, 27(12): 127303-127303.
[9]	符旭, 王方宝, 左希然, 王泽剑, 王倩茹, 王柯钦, 徐凌燕, 徐亚东, 郭榕榕, 于晖, 介万奇. Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties[J]. 中国物理B, 2018, 27(3): 37302-037302.
[10]	相琳琳, 杨身园. Uniaxial strain-modulated electronic structures of CdX (X=S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires[J]. 中国物理B, 2017, 26(8): 87103-087103.
[11]	陈杰, 王雪敏, 张继成, 尹泓卜, 俞健, 赵妍, 吴卫东. Investigation of Zn_1-xCd_xO films bandgap and Zn_1-xCd_xO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy[J]. 中国物理B, 2017, 26(8): 87309-087309.
[12]	张永晖, 梅增霞, 梁会力, 杜小龙. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials[J]. 中国物理B, 2017, 26(4): 47307-047307.
[13]	杨佳霖, 刘可为, 申德振. Recent progress of ZnMgO ultraviolet photodetector[J]. 中国物理B, 2017, 26(4): 47308-047308.
[14]	刘玉荣, 赵高位, 黎沛涛, 姚若河. Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor[J]. 中国物理B, 2016, 25(8): 88503-088503.
[15]	Mohsen Mahmoudi, Zahra Ahangari, Morteza Fathipour. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap[J]. 中国物理B, 2016, 25(1): 18501-018501.