Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

doi:10.1088/1674-1056/25/1/018501

中国物理B ›› 2016, Vol. 25 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/25/1/018501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mohsen Mahmoudi, Zahra Ahangari, Morteza Fathipour

1. Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;
2. Young Researchers and Elite Club, Yadegar-e-Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University, Tehran, Iran

收稿日期:2015-07-30 修回日期:2015-09-14 出版日期:2016-01-05 发布日期:2016-01-05
通讯作者: Mohsen Mahmoudi E-mail:mhsn.mahmoudi@ut.ac.ir

Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Mohsen Mahmoudi¹, Zahra Ahangari², Morteza Fathipour¹

1. Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;
2. Young Researchers and Elite Club, Yadegar-e-Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University, Tehran, Iran

Received:2015-07-30 Revised:2015-09-14 Online:2016-01-05 Published:2016-01-05
Contact: Mohsen Mahmoudi E-mail:mhsn.mahmoudi@ut.ac.ir

摘要/Abstract

摘要：

The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor (DG ASiNR FET) are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green's function (NEGF) approach self-consistently coupled with a three-dimensional (3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO₂ as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power (GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.

关键词: silicene, double-gate field-effect-transistor, non-equilibrium Green', s function, tight binding

Abstract:

Key words: silicene, double-gate field-effect-transistor, non-equilibrium Green', s function, tight binding

中图分类号: (Field effect devices)

85.30.Tv

73.61.Ga (II-VI semiconductors) 73.20.-r (Electron states at surfaces and interfaces) 31.15.aq (Strongly correlated electron systems: generalized tight-binding method)

Mohsen Mahmoudi, Zahra Ahangari, Morteza Fathipour. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap[J]. 中国物理B, 2016, 25(1): 18501-018501.

Mohsen Mahmoudi, Zahra Ahangari, Morteza Fathipour. Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap[J]. Chin. Phys. B, 2016, 25(1): 18501-018501.

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Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

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