Review of deep ultraviolet photodetector based on gallium oxide

doi:10.1088/1674-1056/28/1/018501

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/28/1/018501

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Review of deep ultraviolet photodetector based on gallium oxide

Yuan Qin(覃愿), Shibing Long(龙世兵), Hang Dong(董航), Qiming He(何启鸣), Guangzhong Jian(菅光忠), Ying Zhang(张颖), Xiaohu Hou(侯小虎), Pengju Tan(谭鹏举), Zhongfang Zhang(张中方), Hangbing Lv(吕杭炳), Qi Liu(刘琦), Ming Liu(刘明)

1 Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-09-17 修回日期:2018-10-20 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Shibing Long E-mail:shibinglong@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61522408, 61574169, 61334007, 61474136, and 61574166), the Ministry of Science and Technology of China (Grant Nos. 2018YFB0406504, 2016YFA0201803, 2016YFA0203800, and 2017YFB0405603), the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001), and the Beijing Municipal Science and Technology Project, China (Grant No. Z171100002017011).

Review of deep ultraviolet photodetector based on gallium oxide

Yuan Qin(覃愿)^1,3, Shibing Long(龙世兵)^2,3, Hang Dong(董航)^1,3, Qiming He(何启鸣)¹, Guangzhong Jian(菅光忠)^1,3, Ying Zhang(张颖)^1,3, Xiaohu Hou(侯小虎)², Pengju Tan(谭鹏举)², Zhongfang Zhang(张中方)², Hangbing Lv(吕杭炳)^1,3, Qi Liu(刘琦)^1,3, Ming Liu(刘明)^1,3

1 Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-09-17 Revised:2018-10-20 Online:2019-01-05 Published:2019-01-05
Contact: Shibing Long E-mail:shibinglong@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61522408, 61574169, 61334007, 61474136, and 61574166), the Ministry of Science and Technology of China (Grant Nos. 2018YFB0406504, 2016YFA0201803, 2016YFA0203800, and 2017YFB0405603), the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001), and the Beijing Municipal Science and Technology Project, China (Grant No. Z171100002017011).

摘要/Abstract

摘要：

Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga₂O₃ is regarded as the most promising candidate for UV detection. Furthermore, the bandgap of Ga₂O₃ is as high as 4.7-4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga₂O₃ to tune its bandgap, compared to AlGaN, MgZnO, etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga₂O₃ photodetectors based on single crystal or amorphous Ga₂O₃ are mainly focused on metal-semiconductor-metal and Schottky photodiodes. In this work, the recent achievements of Ga₂O₃ photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga₂O₃ and amorphous Ga₂O₃ thin film are analyzed and compared. Finally, the prospects of Ga₂O₃ UV photodetectors are forecast.

关键词: gallium oxide, ultrawide bandgap, ultraviolet (UV), photodetector

Abstract:

Key words: gallium oxide, ultrawide bandgap, ultraviolet (UV), photodetector

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

73.61.Ga (II-VI semiconductors)

覃愿, 龙世兵, 董航, 何启鸣, 菅光忠, 张颖, 侯小虎, 谭鹏举, 张中方, 吕杭炳, 刘琦, 刘明. Review of deep ultraviolet photodetector based on gallium oxide[J]. 中国物理B, 2019, 28(1): 18501-018501.

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Review of deep ultraviolet photodetector based on gallium oxide

Review of deep ultraviolet photodetector based on gallium oxide

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