中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87309-087309.doi: 10.1088/1674-1056/26/8/087309

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Investigation of Zn1-xCdxO films bandgap and Zn1-xCdxO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

Jie Chen(陈杰), Xue-Min Wang(王雪敏), Ji-Cheng Zhang(张继成), Hong-Bu Yin(尹泓卜), Jian Yu(俞健), Yan Zhao(赵妍), Wei-Dong Wu(吴卫东)   

  1. Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
  • 收稿日期:2017-03-01 修回日期:2017-04-19 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Yan Zhao, Wei-Dong Wu E-mail:zhaoyan267@163.com;wuweidongding@163.com
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents (Grant No. RCFPD1-2017-9).

Investigation of Zn1-xCdxO films bandgap and Zn1-xCdxO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

Jie Chen(陈杰), Xue-Min Wang(王雪敏), Ji-Cheng Zhang(张继成), Hong-Bu Yin(尹泓卜), Jian Yu(俞健), Yan Zhao(赵妍), Wei-Dong Wu(吴卫东)   

  1. Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
  • Received:2017-03-01 Revised:2017-04-19 Online:2017-08-05 Published:2017-08-05
  • Contact: Yan Zhao, Wei-Dong Wu E-mail:zhaoyan267@163.com;wuweidongding@163.com
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents (Grant No. RCFPD1-2017-9).

摘要:

A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn1-xCdxO films, x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn1-xCdxO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (αhν)2- curve. Furthermore, the band offsets of Zn1-xCdxO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.

关键词: ZnCdO film, ZnCdO/ZnO heterojunction, optical bandgap, band offset

Abstract:

A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn1-xCdxO films, x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn1-xCdxO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (αhν)2- curve. Furthermore, the band offsets of Zn1-xCdxO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.

Key words: ZnCdO film, ZnCdO/ZnO heterojunction, optical bandgap, band offset

中图分类号:  (II-VI semiconductors)

  • 73.61.Ga
78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 68.60.-p (Physical properties of thin films, nonelectronic)