中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37307-037307.doi: 10.1088/1674-1056/20/3/037307

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Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

林家齐1, 姜威2, 高红2, 徐玲玲2, 马佳宁2, 张锷2, 魏平2   

  1. (1)Harbin University of Science and Technology, Harbin 150080, China; (2)Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
  • 收稿日期:2010-09-27 修回日期:2010-11-19 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nso. 60776010, 60940021 and 11074060); the Natural Science Foundation of Heilongjiang Province, China (Grant No. A2008-07); and the Doctoral Start-up Fund of Harbin Normal Univer

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

Jiang Wei(姜威)a), Gao Hong(高红) a)†, Xu Ling-Ling(徐玲玲)a)‡, Ma Jia-Ning(马佳宁)a), Zhang E(张锷)a), Wei Ping(魏平)a), and Lin Jia-Qi(林家齐) b)   

  1. a Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China; b Harbin University of Science and Technology, Harbin 150080, China
  • Received:2010-09-27 Revised:2010-11-19 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nso. 60776010, 60940021 and 11074060); the Natural Science Foundation of Heilongjiang Province, China (Grant No. A2008-07); and the Doctoral Start-up Fund of Harbin Normal University, China.

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摘要： Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ=505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

关键词: ZnO nanowire, optoelectronic, micro-grid template

Abstract: Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ=505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

Key words: ZnO nanowire, optoelectronic, micro-grid template

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b