中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37307-037307.doi: 10.1088/1674-1056/20/3/037307
林家齐1, 姜威2, 高红2, 徐玲玲2, 马佳宁2, 张锷2, 魏平2
Jiang Wei(姜威)a), Gao Hong(高红) a)†, Xu Ling-Ling(徐玲玲)a)‡, Ma Jia-Ning(马佳宁)a), Zhang E(张锷)a), Wei Ping(魏平)a), and Lin Jia-Qi(林家齐) b)
摘要: Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ=505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.
中图分类号: (Electronic transport in nanoscale materials and structures)