Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

doi:10.1088/1674-1056/20/10/107802

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 107802-107802.doi: 10.1088/1674-1056/20/10/107802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

许晟瑞¹, 郝跃¹, 张进成¹, 薛晓咏¹, 林志宇¹, 刘子扬¹, 马俊彩¹, 吕玲¹, 李培咸², 贺强², 李建婷³

(1)Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China; (3)Zoomview Oprtoelectronic, Co., LTD, Xi'an 710065, China

收稿日期:2011-05-24 修回日期:2011-07-05 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009).

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

Xu Sheng-Rui(许晟瑞)^a)†, Hao Yue(郝跃)^a), Zhang Jin-Cheng(张进成)^a), Xue Xiao-Yong(薛晓咏)^a), Li Pei-Xian(李培咸)^b), Li Jian-Ting(李建婷)^c), Lin Zhi-Yu(林志宇)^a), Liu Zi-Yang(刘子扬)^a), Ma Jun-Cai(马俊彩)^a), He Qiang(贺强)^b), and Lü Ling(吕玲)^a)

^a Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China; ^c Zoomview Oprtoelectronic, Co., LTD, Xi'an 710065, China

Received:2011-05-24 Revised:2011-07-05 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009).

摘要/Abstract

摘要： The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.

Abstract: The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.

Key words: crystal morphology, nonpolar GaN, Raman, metal-organic chemical vapour deposition

中图分类号: (III-V semiconductors)

78.55.Cr

81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

许晟瑞, 郝跃, 张进成, 薛晓咏, 李培咸, 李建婷, 林志宇, 刘子扬, 马俊彩, 贺强, 吕玲. Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate[J]. 中国物理B, 2011, 20(10): 107802-107802.

Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) . Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate[J]. Chin. Phys. B, 2011, 20(10): 107802-107802.

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Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

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