中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107305-107305.doi: 10.1088/1674-1056/19/10/107305

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Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

王泽高, 陈远富, 陈超, 田本朗, 褚夫同, 刘兴钊, 李言荣   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2010-01-26 修回日期:2010-05-10 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50932002), the Youth Foundation (Grant No. L08010301JX0805) and Start-up Foundation of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China (Grant No. A09010301GG-01).

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric

Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富)†, Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2010-01-26 Revised:2010-05-10 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50932002), the Youth Foundation (Grant No. L08010301JX0805) and Start-up Foundation of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China (Grant No. A09010301GG-01).

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摘要： The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric.

Abstract: The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-$\kappa$ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-$\kappa$ organic dielectric.

Key words: AlGaN/GaN high electron mobility transistor, electrical property, organic dielectric

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 77.22.Ch (Permittivity (dielectric function)) 85.30.Tv (Field effect devices)