中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107304-107304.doi: 10.1088/1674-1056/19/10/107304
蒲红斌1, 曹琳1, 任杰1, 南雅公2
Nan Ya-Gong(南雅公)a)b)†, Pu Hong-Bin(蒲红斌) a), Cao Lin(曹琳)a), and Ren Jie(任杰)a)
摘要: This paper stuides the structures of 4H--SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.
中图分类号: (Impurities in crystals)