中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2205-2208.doi: 10.1088/1674-1056/18/6/016
鞠艳, 邢定钰
Ju Yan(鞠艳)† and Xing Ding-Yu(邢定钰)
摘要: An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.
中图分类号: (Spin transport through interfaces)