中国物理B ›› 2019, Vol. 28 ›› Issue (3): 37202-037202.doi: 10.1088/1674-1056/28/3/037202

所属专题: Virtual Special Topic — Magnetism and Magnetic Materials

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure

Runrun Hao(郝润润), Ruxue Zang(臧如雪), Tie Zhou(周铁), Shishou Kang(康仕寿), Shishen Yan(颜世申), Guolei Liu(刘国磊), Guangbing Han(韩广兵), Shuyun Yu(于淑云), Liangmo Mei(梅良模)   

  1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2018-11-12 修回日期:2019-01-04 出版日期:2019-03-05 发布日期:2019-03-05
  • 通讯作者: Shishou Kang E-mail:skang@sdu.edu.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure

Runrun Hao(郝润润), Ruxue Zang(臧如雪), Tie Zhou(周铁), Shishou Kang(康仕寿), Shishen Yan(颜世申), Guolei Liu(刘国磊), Guangbing Han(韩广兵), Shuyun Yu(于淑云), Liangmo Mei(梅良模)   

  1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2018-11-12 Revised:2019-01-04 Online:2019-03-05 Published:2019-03-05
  • Contact: Shishou Kang E-mail:skang@sdu.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

摘要:

The magnetization-direction-dependent inverse spin Hall effect (ISHE) has been observed in NiFe film during spin Seebeck measurement in IrMn/NiFe/Cu/yttrium iron garnet (YIG) multilayer structure, where the YIG and NiFe layers act as the spin injector and spin current detector, respectively. By using the NiFe/IrMn exchange bias structure, the magnetization direction of YIG (MYIG) can be rotated with respect to that of NiFe (MNiFe) with a small magnetic field, thus allowing us to observe the magnetization-direction-dependent inverse spin Hall effect voltage in NiFe layer. Compared with the situation that polarization direction of spin current (σs) is perpendicular to MNiFe, the spin Seebeck voltage is about 30% larger than that when σs and MNiFe are parallel to each other. This phenomenon may originate from either or both of stronger interface or bulk scattering to spin current when σs and MNiFe are perpendicular to each other. Our work provides a way to control the voltage induced by ISHE in ferromagnets.

关键词: spin current, magnetic insulator, inverse Hall effect

Abstract:

The magnetization-direction-dependent inverse spin Hall effect (ISHE) has been observed in NiFe film during spin Seebeck measurement in IrMn/NiFe/Cu/yttrium iron garnet (YIG) multilayer structure, where the YIG and NiFe layers act as the spin injector and spin current detector, respectively. By using the NiFe/IrMn exchange bias structure, the magnetization direction of YIG (MYIG) can be rotated with respect to that of NiFe (MNiFe) with a small magnetic field, thus allowing us to observe the magnetization-direction-dependent inverse spin Hall effect voltage in NiFe layer. Compared with the situation that polarization direction of spin current (σs) is perpendicular to MNiFe, the spin Seebeck voltage is about 30% larger than that when σs and MNiFe are parallel to each other. This phenomenon may originate from either or both of stronger interface or bulk scattering to spin current when σs and MNiFe are perpendicular to each other. Our work provides a way to control the voltage induced by ISHE in ferromagnets.

Key words: spin current, magnetic insulator, inverse Hall effect

中图分类号:  (Spin transport through interfaces)

  • 72.25.Mk
72.25.Rb (Spin relaxation and scattering) 72.25.-b (Spin polarized transport) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))