中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97505-097505.doi: 10.1088/1674-1056/ac078b

所属专题： SPECIAL TOPIC — Two-dimensional magnetic materials and devices

• • 上一篇    下一篇

Vertical WS2 spin valve with Ohmic property based on Fe3GeTe2 electrodes

Ce Hu(胡策)1,2, Faguang Yan(闫法光)1, Yucai Li(李予才)1,2, and Kaiyou Wang(王开友)1,2,3,†   

  1. 1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 收稿日期:2021-02-25 修回日期:2021-03-22 接受日期:2021-06-03 出版日期:2021-08-19 发布日期:2021-08-24
  • 通讯作者: Kaiyou Wang E-mail:kywang@semi.ac.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFA0303400), the National Natural Science Foundation of China (Grant No. 61774144), Beijing Natural Science Foundation Key Program (Grant No. Z190007), and Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC020, XDB44000000, and XDB28000000).

Vertical WS2 spin valve with Ohmic property based on Fe3GeTe2 electrodes

Ce Hu(胡策)1,2, Faguang Yan(闫法光)1, Yucai Li(李予才)1,2, and Kaiyou Wang(王开友)1,2,3,†   

  1. 1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • Received:2021-02-25 Revised:2021-03-22 Accepted:2021-06-03 Online:2021-08-19 Published:2021-08-24
  • Contact: Kaiyou Wang E-mail:kywang@semi.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFA0303400), the National Natural Science Foundation of China (Grant No. 61774144), Beijing Natural Science Foundation Key Program (Grant No. Z190007), and Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC020, XDB44000000, and XDB28000000).

RichHTML

2

PDF (PC)

410

赞

补充材料

1

摘要： The two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have been recently proposed as a promising class of materials for spintronic applications. Here, we report on the all-2D van der Waals (vdW) heterostructure spin valve device comprising of an exfoliated ultra-thin WS2 semiconductor acting as the spacer layer and two exfoliated ferromagnetic Fe3GeTe2 (FGT) metals acting as ferromagnetic electrodes. The metallic interface rather than Schottky barrier is formed despite the semiconducting nature of WS2, which could be originated from the strong interface hybridization. The spin valve effect persists up to the Curie temperature of FGT. Moreover, our metallic spin valve devices exhibit robust spin valve effect where the magnetoresistance magnitude does not vary with the applied bias in the measured range up to 50 μA due to the Ohmic property, which is a highly desirable feature for practical application that requires stable device performance. Our work reveals that WS2-based all-2D magnetic vdW heterostructure, facilitated by combining 2D magnets, is expected to be an attractive candidate for the TMDCs-based spintronic applications.

关键词: WS2, Fe3GeTe2, spin valve effect, Ohmic property

Abstract: The two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have been recently proposed as a promising class of materials for spintronic applications. Here, we report on the all-2D van der Waals (vdW) heterostructure spin valve device comprising of an exfoliated ultra-thin WS2 semiconductor acting as the spacer layer and two exfoliated ferromagnetic Fe3GeTe2 (FGT) metals acting as ferromagnetic electrodes. The metallic interface rather than Schottky barrier is formed despite the semiconducting nature of WS2, which could be originated from the strong interface hybridization. The spin valve effect persists up to the Curie temperature of FGT. Moreover, our metallic spin valve devices exhibit robust spin valve effect where the magnetoresistance magnitude does not vary with the applied bias in the measured range up to 50 μA due to the Ohmic property, which is a highly desirable feature for practical application that requires stable device performance. Our work reveals that WS2-based all-2D magnetic vdW heterostructure, facilitated by combining 2D magnets, is expected to be an attractive candidate for the TMDCs-based spintronic applications.

Key words: WS2, Fe3GeTe2, spin valve effect, Ohmic property

中图分类号:  (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

  • 75.70.Cn
85.75.Bb (Magnetic memory using giant magnetoresistance) 72.25.Mk (Spin transport through interfaces)