Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

doi:10.1088/1674-1056/24/11/117201

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/24/11/117201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

栾桂苹^a, 张沛然^a, 焦娜^a, 孙立忠^b

a Department of Physics, Xiangtan University, Xiangtan 411105, China;
b Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Scienceand Engineering, Xiangtan University, Xiangtan 411105, China

收稿日期:2015-01-16 修回日期:2015-04-27 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Sun Li-Zhong E-mail:lzsun@xtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10874143, 10974166, and 11574260), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0169), the National Innovation Foundation for Graduate, China (Grant No. 201310530003), and the Computational Support from Shanghai Super-computer Center, China.

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

Luan Gui-Ping (栾桂苹)^a, Zhang Pei-Ran (张沛然)^a, Jiao Na (焦娜)^a, Sun Li-Zhong (孙立忠)^b

a Department of Physics, Xiangtan University, Xiangtan 411105, China;
b Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Scienceand Engineering, Xiangtan University, Xiangtan 411105, China

Received:2015-01-16 Revised:2015-04-27 Online:2015-11-05 Published:2015-11-05
Contact: Sun Li-Zhong E-mail:lzsun@xtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10874143, 10974166, and 11574260), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0169), the National Innovation Foundation for Graduate, China (Grant No. 201310530003), and the Computational Support from Shanghai Super-computer Center, China.

摘要/Abstract

摘要： Using the density functional theory and the nonequilibrium Green’s function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

关键词: graphene, first-principles method, magnetotunnel junction, tunneling magnetoresistance

Abstract: Using the density functional theory and the nonequilibrium Green’s function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

Key words: graphene, first-principles method, magnetotunnel junction, tunneling magnetoresistance

中图分类号: (Galvanomagnetic and other magnetotransport effects)

72.15.Gd

72.25.Mk (Spin transport through interfaces)

栾桂苹, 张沛然, 焦娜, 孙立忠. Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction[J]. 中国物理B, 2015, 24(11): 117201-117201.

Luan Gui-Ping (栾桂苹), Zhang Pei-Ran (张沛然), Jiao Na (焦娜), Sun Li-Zhong (孙立忠). Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction[J]. Chin. Phys. B, 2015, 24(11): 117201-117201.

参考文献 39

[1]	Tsymbal E Y, Burlakov V M and Oleinik I I;2002 Phys. Rev. B 66 073201
[2]	Petukhov A G, Chantis A N and Demchenko D O 2002 Phys. Rev. Lett. 89 107205
[3]	Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Appl. Phys. Lett. 93 082508
[4]	McCreary K M, Swartz A G, Han W, Fabian J and Kawakami R K;2012 Phys. Rev. Lett. 109 186604
[5]	Wojtaszek M, Vera-Marun I J, Maassen T and vanWees B J 2013 Phys. Rev. B 87 081402
[6]	Ke Y Q, Xia K and Guo H 2010 Phys. Rev. Lett. 105 236801
[7]	Hu M L, Yu Z Z, Zhang K W, Sun L Z and Zhong J X 2011 The Journal of Physical Chemistry C 115 8260
[8]	Karpan V M, Khomyakov P A, Starikov A A, Giovannetti G, Zwierzycki M, Talanana M, Brocks G, Brink J van den and Kelly P J 2008 Phys. Rev. B 78 195419
[9]	Saha K K, Blom A, Thygesen K S and Nikolic B K 2012 Phys. Rev. B 85 184426
[10]	Zhu J G and Park C 2006 Materials Today 9 36
[11]	Yuasa S, Nagahama T, Fukushima A, Suzuki Y and Ando K 2004 Nat. Mater. 3 868
[12]	Heiliger C, Zahn P, Yavorsky B Y and Mertig I 2006 Phys. Rev. B 73 214441
[13]	Tanaka C, Nowak J and Moodera J 1997 J. Appl. Phys. 81 5515
[14]	Karpan V, Giovannetti G, Khomyakov P, Talanana M, Starikov A, Zwierzycki M, Van Den Brink J, Brocks G and Kelly P 2007 Phys. Rev. Lett. 99 176602
[15]	Karpan V M, Khomyakov P A, Giovannetti G, Starikov A A and Kelly P J 2011 Phys. Rev. B 84 153406
[16]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[17]	Abanin D A, Lee P A, and Levitov L S 2006 Phys. Rev. Lett. 96 176803
[18]	Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
[19]	Berger C, Song Z M, Li X B, Wu X S, Brown N, Naud C, Mayou D, Li T B, Hass J, Marchenkov A N, Conrad E H, First P N and Heer W A 2006 Science 312 1191
[20]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[21]	Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
[22]	Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P and Geim A K 2007 Science 315 1379
[23]	Hui Z X, He P F, Dai Y and Wu A H 2014 Acta Phys. Sin. 63 074401 (in Chinese)
[24]	Morpurgo A F and Guinea F 2006 Phys. Rev. Lett. 97 196804
[25]	Katsnelson M I 2007 Materials Today 10 20
[26]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[27]	Tombros N, Jozsa C, Popinciuc M, Jonkman H T and Van Wees B J 2007 Nature 448 571
[28]	Sharma S, Kalita G, Ayhan M E, Wakita K, Umeno M and Tanemura M 2013 Journal of Materials Science 48 7036
[29]	Yuan L, Liou S H and Wang D 2012 Phys. Lett. B 716 1
[30]	Li X, Cai W and An J 2009 Science 324 1312
[31]	Huang L, Xu W Y, Que Y D and Mao J H 2013 Chin. Phys. B 22 096803
[32]	Khomyakov P A, Giovannetti G, Rusu P C, Brocks G, Brink J van den and Kelly P J 2009 Phys. Rev. B 79 195425
[33]	Giovannetti G, Khomyakov P A, Brocks G, Karpan V M, Brink J van den and Kelly P J 2008 Phys. Rev. Lett. 101 026803
[34]	Thomas O, Jun Y, Mortensen J J and Thygesem K S 2011 Phys. Rev. Lett. 107 156401
[35]	Li B, Chen L and Pan X 2011 Appl. Phys. Lett. 98 133111
[36]	Stokbro K 2008 J. Phys.: Conden. Matter 20 064216
[37]	Yazyev O V and Pasquarello A 2009 Phys. Rev. B 80 035408
[38]	Xia K, Zwierzycki M, Talanana M, Kelly P J and Bauer G E W 2006 Phys. Rev. B 73 064420
[39]	Zhou J, Wang L, Qin R, Zheng J, Mei W N and Dowben P A 2011 The Journal of Physical Chemistry C 115 25273

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

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