中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2205-2208.doi: 10.1088/1674-1056/18/6/016

• GENERAL • 上一篇    下一篇

Spin-filtering junctions with double ferroelectric barriers

鞠艳, 邢定钰   

  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2008-11-25 修回日期:2008-12-19 出版日期:2009-06-20 发布日期:2009-06-20
  • 基金资助:
    Project supported by the State Key Program for Basic Research of China (Grant Nos 2009CB929504, 2006CB921803 and 2004CB619004).

Spin-filtering junctions with double ferroelectric barriers

Ju Yan(鞠艳)† and Xing Ding-Yu(邢定钰)   

  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2008-11-25 Revised:2008-12-19 Online:2009-06-20 Published:2009-06-20
  • Supported by:
    Project supported by the State Key Program for Basic Research of China (Grant Nos 2009CB929504, 2006CB921803 and 2004CB619004).

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摘要： An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.

Abstract: An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.

Key words: ferroelectric barrier, tunnel junction, spin detection

中图分类号:  (Spin transport through interfaces)

  • 72.25.Mk
72.20.My (Galvanomagnetic and other magnetotransport effects) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 75.50.Pp (Magnetic semiconductors)