中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1405-1409.doi: 10.1088/1674-1056/17/4/042

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A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

岳远征, 郝跃, 张进城, 冯倩, 倪金玉, 马晓华   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2007-08-26 修回日期:2007-10-10 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by NSFC (Grant No 60736033) and National 973 Basic Research Project (Grant No 51327020301).

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城),Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2007-08-26 Revised:2007-10-10 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by NSFC (Grant No 60736033) and National 973 Basic Research Project (Grant No 51327020301).

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摘要： This paper studies systematically the drain current collapse in AlGaN/GaN metal--oxide--semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of A12O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD A12O3. A small increase in Idd in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Idd-Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD A12O3.

关键词: AlGaN/GaN MOS-HEMT, A12O3, passivation

Abstract: This paper studies systematically the drain current collapse in AlGaN/GaN metal--oxide--semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of A12O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD A12O3. A small increase in Idd in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Idd-Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD A12O3.

Key words: AlGaN/GaN MOS-HEMT, A12O3, passivation

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
81.65.Rv (Passivation) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)