中国物理B ›› 2019, Vol. 28 ›› Issue (9): 98201-098201.doi: 10.1088/1674-1056/ab33ec

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells

Jianhui Bao(包建辉), Ke Tao(陶科), Yiren Lin(林苡任), Rui Jia(贾锐), Aimin Liu(刘爱民)   

  1. 1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
    2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 China;
    3 School of Physics & Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China
  • 收稿日期:2019-05-15 修回日期:2019-06-24 出版日期:2019-09-05 发布日期:2019-09-05
  • 通讯作者: Ke Tao, Rui Jia, Aimin Liu E-mail:taoke@ime.ac.cn;imesolar@126.com;aiminl@dult.edu.com
  • 基金资助:

    Project supported by the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), and JKW Project, China (Grant No. 31512060106).

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells

Jianhui Bao(包建辉)1,2, Ke Tao(陶科)2, Yiren Lin(林苡任)1, Rui Jia(贾锐)2, Aimin Liu(刘爱民)3   

  1. 1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
    2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 China;
    3 School of Physics & Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China
  • Received:2019-05-15 Revised:2019-06-24 Online:2019-09-05 Published:2019-09-05
  • Contact: Ke Tao, Rui Jia, Aimin Liu E-mail:taoke@ime.ac.cn;imesolar@126.com;aiminl@dult.edu.com
  • Supported by:

    Project supported by the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), and JKW Project, China (Grant No. 31512060106).

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摘要：

Interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures. The front surface field (FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells. The electric field passivated layer n+-a-Si:H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ. It is indicated that the n+-a-Si:H layer with wider band gap can reduce the light absorption on the front side efficaciously, which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc. The highly doped n+-a-Si:H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation. It is noteworthy that when the electric field intensity exceeds 1.3×105 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%. In this study, the IBC-SHJ solar cell with a front n+-a-Si:H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.

关键词: Si-based doped materials, passivation, interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cell, simulation

Abstract:

Interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures. The front surface field (FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells. The electric field passivated layer n+-a-Si:H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ. It is indicated that the n+-a-Si:H layer with wider band gap can reduce the light absorption on the front side efficaciously, which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density Jsc. The highly doped n+-a-Si:H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation. It is noteworthy that when the electric field intensity exceeds 1.3×105 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%. In this study, the IBC-SHJ solar cell with a front n+-a-Si:H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.

Key words: Si-based doped materials, passivation, interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cell, simulation

中图分类号:  (Computational modeling; simulation)

  • 82.20.Wt
77.55.df (For silicon electronics) 82.45.Bb (Corrosion and passivation)