中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1410-1414.doi: 10.1088/1674-1056/17/4/043
车勇1, 吕红亮2, 张义门2, 张玉明2
Lü Hong-Liang(吕红亮)a), Zhang Yi-Men(张义门)a), Zhang Yu-Ming(张玉明)a), and Che Yong(车勇)b)
摘要: A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.
中图分类号: (Low-field transport and mobility; piezoresistance)