中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1360-1363.doi: 10.1088/1674-1056/17/4/034
Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
李新化, 钟飞, 邱凯, 尹志军, 姬长建
- Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
Li Xin-Hua(李新化)†, Zhong Fei(钟飞), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), and Ji Chang-Jian(姬长建)
- Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
摘要： This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double AlN buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800\du\ and 600\du, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858\,cm$^{2}$/V$\cdot $s at room temperature when the thickness of LT-AlN layer varies from 0 to 20\,nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer.
中图分类号: (Thin film structure and morphology)
- 68.55.-a