中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87202-087202.doi: 10.1088/1674-1056/ac068f

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Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

Kaiyao Zhou(周楷尧)1,2, Jun Deng(邓俊)1,2, Long Chen(陈龙)1,2, Wei Xia(夏威)4,5, Yanfeng Guo(郭艳峰)4,5, Yang Yang(杨洋)1,2, Jian-Gang Guo(郭建刚)1,3,†, and Liwei Guo(郭丽伟)1,2,3,‡   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    4 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    5 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
  • 收稿日期:2021-04-09 修回日期:2021-05-08 接受日期:2021-05-29 出版日期:2021-07-16 发布日期:2021-07-23
  • 通讯作者: Jian-Gang Guo, Liwei Guo E-mail:jgguo@iphy.ac.cn;lwguo@iphy.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0202600, 2016YFA0300600, and 2017YFA0304700), by the National Natural Science Foundation of China (Grant Nos. 51922105, 51772322, and 11704401), and Beijing Natural Science Foundation (Grant No. Z200005).

Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

Kaiyao Zhou(周楷尧)1,2, Jun Deng(邓俊)1,2, Long Chen(陈龙)1,2, Wei Xia(夏威)4,5, Yanfeng Guo(郭艳峰)4,5, Yang Yang(杨洋)1,2, Jian-Gang Guo(郭建刚)1,3,†, and Liwei Guo(郭丽伟)1,2,3,‡   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    4 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    5 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
  • Received:2021-04-09 Revised:2021-05-08 Accepted:2021-05-29 Online:2021-07-16 Published:2021-07-23
  • Contact: Jian-Gang Guo, Liwei Guo E-mail:jgguo@iphy.ac.cn;lwguo@iphy.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0202600, 2016YFA0300600, and 2017YFA0304700), by the National Natural Science Foundation of China (Grant Nos. 51922105, 51772322, and 11704401), and Beijing Natural Science Foundation (Grant No. Z200005).

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摘要： Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2·V-1·s-1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications.

关键词: carrier mobility, anisotropic transport, Raman spectroscopy

Abstract: Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb2SiTe4 is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb2SiTe4 with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm2·V-1·s-1 in bulk Nb2SiTe4, higher than the reported results. In a thin flake Nb2SiTe4, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb2SiTe4 for electronic device applications.

Key words: carrier mobility, anisotropic transport, Raman spectroscopy

中图分类号:  (Transition-metal compounds)

  • 72.80.Ga
72.20.Fr (Low-field transport and mobility; piezoresistance) 74.25.nd (Raman and optical spectroscopy)