中国物理B ›› 2008, Vol. 17 ›› Issue (2): 685-689.doi: 10.1088/1674-1056/17/2/054

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A novel 10-nm physical gate length double-gate junction field effect transistor

侯晓宇1, 黄 如1, 陈 刚1, 刘 晟1, 张 兴1, 王阳元1, 俞 滨2   

  1. (1)Institute of Microelectronics, Peking University, Beijing 100871, China; (2)NASA Ames Research Center, Moffett Field, CA 94035,USA
  • 收稿日期:2007-05-24 修回日期:2007-07-02 出版日期:2008-02-20 发布日期:2008-02-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60625403), by the Special Funds for Major State Basic Research (973) Projects and NCET program.

A novel 10-nm physical gate length double-gate junction field effect transistor

Hou Xiao-Yu(侯晓宇)a), Huang Ru(黄如)a)†,, Chen Gang(陈刚)a), Liu Sheng(刘晟)a), Zhang Xing(张兴)a), Yu Bin(俞滨)b), and Wang Yang-Yuan(王阳元)a)   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China; b NASA Ames Research Center, Moffett Field, CA 94035,USA
  • Received:2007-05-24 Revised:2007-07-02 Online:2008-02-20 Published:2008-02-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60625403), by the Special Funds for Major State Basic Research (973) Projects and NCET program.

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摘要： A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60{\%} in comparison with the conventional DG MOSFETs.

关键词: MOSFET, double-gate MOSFET, depletion operation mode

Abstract: A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.

Key words: MOSFET, double-gate MOSFET, depletion operation mode

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)