中国物理B ›› 2006, Vol. 15 ›› Issue (5): 980-984.doi: 10.1088/1009-1963/15/5/019

• GENERAL • 上一篇    下一篇

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

周祖源, 陈广超, 唐伟忠, 吕反修   

  1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • 收稿日期:2005-07-21 修回日期:2005-12-27 出版日期:2006-05-20 发布日期:2006-05-20
  • 基金资助:
    Project supported by the Key Research Project of Chinese Hi-Tech (Grant No 2002AA305508); the National Natural Science Foundation of China (Grant No 50472095); SRF for ROCS, SEM (Grant No 2003-14) and Beijing Novel Project (Grant No 2003A13).

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

Zhou Zu-Yuan (周祖源), Chen Guang-Chao (陈广超), Tang Wei-Zhong (唐伟忠), Lü Fan-Xiu (吕反修)   

  1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • Received:2005-07-21 Revised:2005-12-27 Online:2006-05-20 Published:2006-05-20
  • Supported by:
    Project supported by the Key Research Project of Chinese Hi-Tech (Grant No 2002AA305508); the National Natural Science Foundation of China (Grant No 50472095); SRF for ROCS, SEM (Grant No 2003-14) and Beijing Novel Project (Grant No 2003A13).

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摘要： This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar) could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Abstract: This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar) could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Key words: gas phase, OES, diamond film, high power DC arc plasma jet CVD

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
52.25.Os (Emission, absorption, and scattering of electromagnetic radiation ?) 52.75.-d (Plasma devices) 52.77.Dq (Plasma-based ion implantation and deposition)