中国物理B ›› 2003, Vol. 12 ›› Issue (8): 895-898.doi: 10.1088/1009-1963/12/8/314

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Numerical modelling of anisotropy in 4H-SiC MESFET's

吕红亮, 张义门, 张玉明   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2002-10-23 修回日期:2003-03-20 出版日期:2005-03-16 发布日期:2005-03-16

Numerical modelling of anisotropy in 4H-SiC MESFET's

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2002-10-23 Revised:2003-03-20 Online:2005-03-16 Published:2005-03-16

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摘要： A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.

Abstract: A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.

Key words: 4H-SiC, MESFET, anisotropy, numerical model

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)