中国物理B ›› 2003, Vol. 12 ›› Issue (4): 389-393.doi: 10.1088/1009-1963/12/4/308

• NUCLEAR PHYSICS • 上一篇    下一篇

Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor

杨林安, 于春利, 张义门, 张玉明   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2002-07-23 修回日期:2003-01-02 出版日期:2005-03-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the Advanced Research Foundation for National Defence of China (Grant No. 8.1.7.3).

Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor

Yang Lin-An (杨林安), Yu Chun-Li (于春利), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2002-07-23 Revised:2003-01-02 Online:2005-03-16 Published:2005-03-16
  • Supported by:
    Project supported by the Advanced Research Foundation for National Defence of China (Grant No. 8.1.7.3).

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摘要： The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is proposed, which takes into account the surface-related parameters. The frequency- and temperature- dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices.

Abstract: The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is proposed, which takes into account the surface-related parameters. The frequency- and temperature- dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices.

Key words: silicon carbide, MESFET, surface states, transconductance

中图分类号:  (Field effect devices)

  • 85.30.Tv