中国物理B ›› 1995, Vol. 4 ›› Issue (2): 118-124.doi: 10.1088/1004-423X/4/2/006

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ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

刘向东1, 刘洁田1, 李岱青2, 任廷琦2, 赵清太3, 徐天冰4, 朱沛然4, 周俊思4   

  1. (1)Department of Physics, Shandong University, Jinan 250100, China; (2)Department of Physics, Yantai Teachers College, Yantai 264025, China; (3)Institute of Microelectronics, Peking University, Beijing 100871, China; (4)Institute of Physics, Academy Sinica, Beijing 100080, China
  • 收稿日期:1994-02-14 出版日期:1995-02-20 发布日期:1995-02-20

ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

XU TIAN-BING (徐天冰)a, ZHU PEI-RAN (朱沛然)a, ZHOU JUN-SI (周俊思)a, LI DAI-QING (李岱青)b, REN TING-QI (任廷琦)b, ZHAO QING-TAI (赵清太)c, LIU XIANG-DONG (刘向东)d, LIU JIE-TIAN (刘洁田)d   

  1. a Institute of Physics, Academy Sinica, Beijing 100080, China; b Department of Physics, Yantai Teachers College, Yantai 264025, China; c Institute of Microelectronics, Peking University, Beijing 100871, China; d Department of Physics, Shandong University, Jinan 250100, China
  • Received:1994-02-14 Online:1995-02-20 Published:1995-02-20

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摘要： The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.

Abstract: The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
61.72.uf (Ge and Si) 68.49.Sf (Ion scattering from surfaces (charge transfer, sputtering, SIMS)) 61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?) 61.43.Dq (Amorphous semiconductors, metals, and alloys)