中国物理B ›› 1993, Vol. 2 ›› Issue (10): 776-781.doi: 10.1088/1004-423X/2/10/008
刘湘娜1, 何宇亮1, 唐文国2, 龚涛2, 李自元2
TANG WEN-GUO (唐文国)a, GONG TAO (龚涛)a, LI ZI-YUAN (李自元)a, LIU XIANG-NA (刘湘娜)b, HE YU-LIANGb
摘要: Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.
中图分类号: (Elemental semiconductors and insulators)