中国物理B ›› 1993, Vol. 2 ›› Issue (10): 776-781.doi: 10.1088/1004-423X/2/10/008

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PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS

刘湘娜1, 何宇亮1, 唐文国2, 龚涛2, 李自元2   

  1. (1)Department of Physics and State Key Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210008, China; (2)Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1992-11-12 出版日期:1993-10-20 发布日期:1993-10-20

PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS

TANG WEN-GUO (唐文国)a, GONG TAO (龚涛)a, LI ZI-YUAN (李自元)a, LIU XIANG-NA (刘湘娜)b, HE YU-LIANGb   

  1. a Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China; bDepartment of Physics and State Key Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210008, China
  • Received:1992-11-12 Online:1993-10-20 Published:1993-10-20

摘要: Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.

Abstract: Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.

中图分类号:  (Elemental semiconductors and insulators)

  • 78.66.Db
78.55.Ap (Elemental semiconductors) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 61.46.Hk (Nanocrystals)