中国物理B ›› 2002, Vol. 11 ›› Issue (9): 960-962.doi: 10.1088/1009-1963/11/9/320

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Electroluminescence from Si/SiO2 films deposited on p-Si substrates

马书懿1, 陈辉1, 萧勇2   

  1. (1)Department of Physics, Northwest Normal University, Lanzhou 730070, China; (2)Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
  • 收稿日期:2002-01-19 修回日期:2002-04-16 出版日期:2002-09-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU.

Electroluminescence from Si/SiO2 films deposited on p-Si substrates

Ma Shu-Yi (马书懿)a, Xiao Yong (萧勇)b, Chen Hui (陈辉)a   

  1. a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
  • Received:2002-01-19 Revised:2002-04-16 Online:2002-09-12 Published:2005-06-12
  • Supported by:
    Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU.

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摘要： The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.

Abstract: The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.

Key words: Si/SiO2 film, electroluminescence

中图分类号:  (Electroluminescence)

  • 78.60.Fi
78.66.Db (Elemental semiconductors and insulators) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials) 78.40.Fy (Semiconductors) 81.15.Cd (Deposition by sputtering) 68.65.Ac (Multilayers)