中国物理B ›› 2025, Vol. 34 ›› Issue (5): 57104-057104.doi: 10.1088/1674-1056/adb8b6

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Amorphous IGMO/IGZO heterojunction thin-film transistors with enhanced ultraviolet detection performance

Jichun Yao(姚继春), Yiyu Zhang(张怡宇), and Xingzhao Liu(刘兴钊)†   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
  • 收稿日期:2024-12-16 修回日期:2025-02-19 接受日期:2025-02-21 发布日期:2025-04-24
  • 通讯作者: Xingzhao Liu E-mail:xzliu@uestc.edu.cn
  • 基金资助:
    Project supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China (Grant No. U21A2071).

Amorphous IGMO/IGZO heterojunction thin-film transistors with enhanced ultraviolet detection performance

Jichun Yao(姚继春), Yiyu Zhang(张怡宇), and Xingzhao Liu(刘兴钊)†   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
  • Received:2024-12-16 Revised:2025-02-19 Accepted:2025-02-21 Published:2025-04-24
  • Contact: Xingzhao Liu E-mail:xzliu@uestc.edu.cn
  • Supported by:
    Project supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China (Grant No. U21A2071).

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摘要： Amorphous InGaZnO (IGZO) is a potential candidate for integrated circuits based on thin-film transistors (TFTs) owing to its low-temperature processability and high mobility. Amorphous InGaMgO/InGaZnO (IGMO/IGZO) heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report. The energy band at the IGMO/IGZO heterojunction was characterized, and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction. Furthermore, the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8$\times10^{3}$ A/W and a large detectivity of 5.2$\times10^{14 }$ Jones under 350-nm ultraviolet illumination, which will also benefit for fabrication of monolithic ultraviolet sensing chip.

关键词: InGaZnO (IGZO), heterojunction, transistors, ultraviolet detection

Abstract: Amorphous InGaZnO (IGZO) is a potential candidate for integrated circuits based on thin-film transistors (TFTs) owing to its low-temperature processability and high mobility. Amorphous InGaMgO/InGaZnO (IGMO/IGZO) heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report. The energy band at the IGMO/IGZO heterojunction was characterized, and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction. Furthermore, the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8$\times10^{3}$ A/W and a large detectivity of 5.2$\times10^{14 }$ Jones under 350-nm ultraviolet illumination, which will also benefit for fabrication of monolithic ultraviolet sensing chip.

Key words: InGaZnO (IGZO), heterojunction, transistors, ultraviolet detection

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
73.20.At (Surface states, band structure, electron density of states) 73.40.-c (Electronic transport in interface structures) 78.40.-q (Absorption and reflection spectra: visible and ultraviolet)