中国物理B ›› 2025, Vol. 34 ›› Issue (5): 56101-056101.doi: 10.1088/1674-1056/adbaca

• • 上一篇    下一篇

Enhanced electronic and photoelectrical properties of two-dimensional Zn-doped SnS2

Xichen Chuai(揣喜臣)1,2, Peng Yin(殷鹏)3,4, Jiawei Wang(王嘉玮)1, Guanhua Yang(杨冠华)1, Congyan Lu(陆丛研)1, Di Geng(耿玓)1, Ling Li(李泠)1, Can Liu(刘灿)4,†, Zhongming Wei(魏钟鸣)3,‡, and Nianduan Lu(卢年端)1,§   

  1. 1 Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 School of Physics, Renmin University of China, Beijing 100872, China
  • 收稿日期:2024-11-30 修回日期:2025-01-12 接受日期:2025-02-27 出版日期:2025-04-18 发布日期:2025-05-08
  • 通讯作者: Can Liu, Zhongming Wei, Nianduan Lu E-mail:lunianduan@ime.ac.cn;zmwei@semi.ac.cn;canliu@ruc.edu.cn
  • 基金资助:
    Project supported by the Beijing Natural Science Foundation (Grant No. Z220005), the National Key Research and Development Program of China (Grant Nos. 2022YFB3606902 and 2022YFA1405600), and the National Natural Science Foundation of China (Grant No. 12274456) by the Opening Project of the Laboratory of Microelectronic Devices & Integrated Technology, Chinese Academy of Sciences (CAS), Institute of Microelectronics, Chinese Academy of Sciences.

Enhanced electronic and photoelectrical properties of two-dimensional Zn-doped SnS2

Xichen Chuai(揣喜臣)1,2, Peng Yin(殷鹏)3,4, Jiawei Wang(王嘉玮)1, Guanhua Yang(杨冠华)1, Congyan Lu(陆丛研)1, Di Geng(耿玓)1, Ling Li(李泠)1, Can Liu(刘灿)4,†, Zhongming Wei(魏钟鸣)3,‡, and Nianduan Lu(卢年端)1,§   

  1. 1 Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 School of Physics, Renmin University of China, Beijing 100872, China
  • Received:2024-11-30 Revised:2025-01-12 Accepted:2025-02-27 Online:2025-04-18 Published:2025-05-08
  • Contact: Can Liu, Zhongming Wei, Nianduan Lu E-mail:lunianduan@ime.ac.cn;zmwei@semi.ac.cn;canliu@ruc.edu.cn
  • Supported by:
    Project supported by the Beijing Natural Science Foundation (Grant No. Z220005), the National Key Research and Development Program of China (Grant Nos. 2022YFB3606902 and 2022YFA1405600), and the National Natural Science Foundation of China (Grant No. 12274456) by the Opening Project of the Laboratory of Microelectronic Devices & Integrated Technology, Chinese Academy of Sciences (CAS), Institute of Microelectronics, Chinese Academy of Sciences.

RichHTML

0

PDF (PC)

146

赞

摘要： Alloy engineering, with its ability to tune the electronic band structure, is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional (2D) semiconductors. However, synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth. Here, we report the preparation of a high-quality metal-site substitution alloy, Zn$_{0.167}$Sn$_{0.833}$S$_{2}$, via the chemical vapor transport method, which exhibits excellent photoresponsivity and enhanced electrical transport properties. Comprehensive characterization techniques, including Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and electron microscopy, unambiguously confirm the uniform Zn substitution in the as-prepared Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy. Furthermore, the photodetector based on the Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy demonstrated a high on/off ratio of 51 under white light, a wide spectral response range from 350 nm to 900 nm, and a broad dynamic power range of 80 dB under 638-nm illumination. In terms of transport properties, field-effect transistors (FETs) based on Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ achieved a carrier mobility of 6.5 cm$^2\cdot$V$^{-1}\cdot$s$^{-1}$, which is six times higher than that of SnS$_2$. This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties, offering great potential for the development of high-resolution photodetection technologies.

关键词: alloy engineering, metal-site substitution, photodetector, field-effect transistors

Abstract: Alloy engineering, with its ability to tune the electronic band structure, is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional (2D) semiconductors. However, synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature growth. Here, we report the preparation of a high-quality metal-site substitution alloy, Zn$_{0.167}$Sn$_{0.833}$S$_{2}$, via the chemical vapor transport method, which exhibits excellent photoresponsivity and enhanced electrical transport properties. Comprehensive characterization techniques, including Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and electron microscopy, unambiguously confirm the uniform Zn substitution in the as-prepared Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy. Furthermore, the photodetector based on the Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ alloy demonstrated a high on/off ratio of 51 under white light, a wide spectral response range from 350 nm to 900 nm, and a broad dynamic power range of 80 dB under 638-nm illumination. In terms of transport properties, field-effect transistors (FETs) based on Zn$_{0.167}$Sn$_{0.833}$S$_{2}$ achieved a carrier mobility of 6.5 cm$^2\cdot$V$^{-1}\cdot$s$^{-1}$, which is six times higher than that of SnS$_2$. This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties, offering great potential for the development of high-resolution photodetection technologies.

Key words: alloy engineering, metal-site substitution, photodetector, field-effect transistors

中图分类号:  (Amorphous semiconductors, metals, and alloys)

  • 61.43.Dq
74.62.Dh (Effects of crystal defects, doping and substitution) 85.60.Gz (Photodetectors (including infrared and CCD detectors)) 85.30.Tv (Field effect devices)