中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/acfb79

所属专题： SPECIAL TOPIC—Post-Moore era: Materials and device physics

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Tensile stress regulated microstructures and ferroelectric properties of Hf0.5Zr0.5O2 films

Siying Huo(霍思颖)1, Junfeng Zheng(郑俊锋)1, Yuanyang Liu(刘远洋)1, Yushan Li(李育姗)1, Ruiqiang Tao(陶瑞强)1, Xubing Lu(陆旭兵)1,†, and Junming Liu(刘俊明)2   

  1. 1 Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China;
    2 Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2023-07-26 修回日期:2023-09-12 接受日期:2023-09-20 出版日期:2023-11-14 发布日期:2023-11-30
  • 通讯作者: Xubing Lu E-mail:luxubing@m.scnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281), the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008), the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064), and the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066).

Tensile stress regulated microstructures and ferroelectric properties of Hf0.5Zr0.5O2 films

Siying Huo(霍思颖)1, Junfeng Zheng(郑俊锋)1, Yuanyang Liu(刘远洋)1, Yushan Li(李育姗)1, Ruiqiang Tao(陶瑞强)1, Xubing Lu(陆旭兵)1,†, and Junming Liu(刘俊明)2   

  1. 1 Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China;
    2 Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2023-07-26 Revised:2023-09-12 Accepted:2023-09-20 Online:2023-11-14 Published:2023-11-30
  • Contact: Xubing Lu E-mail:luxubing@m.scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281), the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008), the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064), and the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066).

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摘要： The discovery of ferroelectricity in HfO2 based materials reactivated the research on ferroelectric memory. However, the complete mechanism underlying its ferroelectricity remains to be fully elucidated. In this study, we conducted a systematic study on the microstructures and ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films with various annealing rates in the rapid thermal annealing. It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size, reduced surface roughness and a higher portion of orthorhombic phase. Moreover, these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates. The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films, which was weakened with decreasing annealing rate. Our findings revealed that this internal stress, along with the stress originating from the top/bottom electrode, plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films. By carefully controlling the annealing rate, we could effectively regulate the tension stress within HZO thin films, thus achieving precise control over their ferroelectric properties. This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

关键词: HfO2, ferroelectric materials, tension stress, annealing

Abstract: The discovery of ferroelectricity in HfO2 based materials reactivated the research on ferroelectric memory. However, the complete mechanism underlying its ferroelectricity remains to be fully elucidated. In this study, we conducted a systematic study on the microstructures and ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films with various annealing rates in the rapid thermal annealing. It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size, reduced surface roughness and a higher portion of orthorhombic phase. Moreover, these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates. The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films, which was weakened with decreasing annealing rate. Our findings revealed that this internal stress, along with the stress originating from the top/bottom electrode, plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films. By carefully controlling the annealing rate, we could effectively regulate the tension stress within HZO thin films, thus achieving precise control over their ferroelectric properties. This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

Key words: HfO2, ferroelectric materials, tension stress, annealing

中图分类号: 

  • 77.55.D-
77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)