Growth and doping of bulk GaN by hydride vapor phase epitaxy

doi:10.1088/1674-1056/ab65b9

中国物理B ›› 2020, Vol. 29 ›› Issue (2): 26104-026104.doi: 10.1088/1674-1056/ab65b9

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Growth and doping of bulk GaN by hydride vapor phase epitaxy

Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), De-Min Cai(蔡德敏), Guo-Qiang Ren(任国强), Yu Xu(徐俞), Ming-Yue Wang(王明月), Xiao-Jian Hu(胡晓剑), Ke Xu(徐科)

1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

收稿日期:2019-10-31 修回日期:2019-12-14 出版日期:2020-02-05 发布日期:2020-02-05
通讯作者: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0404100 and 2016YFA0201101), the National Natural Science Foundation of China (Grant Nos. 61574164, 61704187, and 61604170), the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH042), the State Key Program of the National Natural Science Foundation of China (Grant Nos. 61734008 and 11435010), and the National Key Scientific Instrument and Equipment Development Project, China (Grant No. 11327804).

Growth and doping of bulk GaN by hydride vapor phase epitaxy

Yu-Min Zhang(张育民)^1,2, Jian-Feng Wang(王建峰)^1,2, De-Min Cai(蔡德敏)², Guo-Qiang Ren(任国强)¹, Yu Xu(徐俞)^1,2, Ming-Yue Wang(王明月)^1,2, Xiao-Jian Hu(胡晓剑)^1,2, Ke Xu(徐科)^1,2

1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

Received:2019-10-31 Revised:2019-12-14 Online:2020-02-05 Published:2020-02-05
Contact: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0404100 and 2016YFA0201101), the National Natural Science Foundation of China (Grant Nos. 61574164, 61704187, and 61604170), the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH042), the State Key Program of the National Natural Science Foundation of China (Grant Nos. 61734008 and 11435010), and the National Key Scientific Instrument and Equipment Development Project, China (Grant No. 11327804).

摘要/Abstract

摘要： Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

关键词: GaN, hydride vapor phase epitaxy (HVPE), doping

Abstract: Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

Key words: GaN, hydride vapor phase epitaxy (HVPE), doping

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

81.05.Ea (III-V semiconductors) 81.10.Bk (Growth from vapor) 61.72.-y (Defects and impurities in crystals; microstructure)

张育民, 王建峰, 蔡德敏, 任国强, 徐俞, 王明月, 胡晓剑, 徐科. Growth and doping of bulk GaN by hydride vapor phase epitaxy[J]. 中国物理B, 2020, 29(2): 26104-026104.

Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), De-Min Cai(蔡德敏), Guo-Qiang Ren(任国强), Yu Xu(徐俞), Ming-Yue Wang(王明月), Xiao-Jian Hu(胡晓剑), Ke Xu(徐科). Growth and doping of bulk GaN by hydride vapor phase epitaxy[J]. Chin. Phys. B, 2020, 29(2): 26104-026104.

参考文献 131

[1]	Miyoshi T, Masui S, Okada T, Yanamoto T, Kozaki T, Nagahama S-i and Mukai T 2009 Appl. Phys. Express 2 062201 doi: 10.1143/APEX.2.062201
[2]	Okur S, Shimada R, Zhang F, Hafiz S D A, Lee J, Avrutin V, Morkoc H, Franke A, Bertram F, Christen J and Oezguer U 2013 Jpn. J. Appl. Phys. 52 Unsp 08JH03
[3]	Meyer D J, Deen D A, Storm D F, Ancona M G, Katzer D S, Bass R, Roussos J A, Downey B P, Binari S C, Gougousi T, Paskova T, Preble E A and Evans K R 2013 IEEE Electron Dev. Lett. 34 199 doi: 10.1109/LED.2012.2228463
[4]	Storm D F, Katzer D S, Roussos J A, Mittereder J A, Bass R, Binari S C, Hanser D, Preble E A and Evans K R 2007 J. Cryst. Growth 301 429
[5]	Liu X, Liu Q, Li C, Wang J, Yu W, Xu K and Ao J P 2017 Jpn. J. Appl. Phys. 56 026501 doi: 10.7567/JJAP.56.026501
[6]	Gu H, Hu C, Wang J, Lu Y, Ao J P, Tian F, Zhang Y, Wang M, Liu X and Xu K 2019 J. Alloys Compd. 780 476 doi: 10.1016/j.jallcom.2018.12.014
[7]	Gu H, Tian F, Zhang C, Xu K, Wang J, Chen Y, Deng X and Liu X 2019 Nanoscale Res. Lett. 14 40 doi: 10.1186/s11671-019-2872-7
[8]	Liu Z, Wang J, Gu H, Zhang Y, Wang W, Xiong R and Xu K 2019 AIP Adv. 9 055016 doi: 10.1063/1.5100251
[9]	Ji X, Dong W, Zhang Y, Wang J and Xu k 2019 Chin. Phys. B 28 067701 doi: 10.1088/1674-1056/28/6/067701
[10]	Mulligan P, Wang J and Cao L 2013 Nucl. Instrum. Method A 719 13 doi: 10.1016/j.nima.2013.04.019
[11]	Fan Y, Xu K, Liu Z, Xu G, Zhong H, Huang Z, Zhang Y and Wang J 2017 Jpn. J. Appl. Phys. 56 050307 doi: 10.7567/JJAP.56.050307
[12]	Fu K, Yu G, Yao C, Wang G, Lu M and Zhang G 2011 Phys. Status Solidi-R 5 187 doi: 10.1002/pssr.201105163
[13]	Hibberd M T, Frey V, Spencer B F, Mitchell P W, Dawson P, Kappers M J, Oliver R A, Humphreys C J and Graham D M 2016 Solid State Commun. 247 68 doi: 10.1016/j.ssc.2016.08.017
[14]	Harima H 2002 J. Phys.-Condens. Matter 14 967 doi: 10.1088/0953-8984/14/5/302
[15]	Xu K, Wang J F and Ren G Q 2015 Chin. Phys. B 24 066105 doi: 10.1088/1674-1056/24/6/066105
[16]	Motoki K, Okahisa T, Matsumoto N, Matsushima M, Kimura H, Kasai H, Takemoto K, Uematsu K, Hirano T, Nakayama M, Nakahata S, Ueno M, Hara D, Kumagai Y, Koukitu A and Seki H 2001 Jpn. J. Appl. Phys. 40 L140
[17]	Fujikura H, Yoshida T, Shibata M and Otoki Y 2017 Conference on Gallium Nitride Materials and Devices XII, January 30-February 2, 2017, San Francisco, USA, p. 1010403
[18]	Yoshida T, Imanishi M, Kitamura T, Otaka K, Imade M, Shibata M and Mori Y 2017 Phys. Status Solidi B 254 1600671 doi: 10.1002/pssb.201600671
[19]	Gu H, Ren G, Zhou T, Tian F, Xu Y, Zhang Y, Wang M, Wang J and Xu K 2016 J. Cryst. Growth 436 76 doi: 10.1016/j.jcrysgro.2015.11.027
[20]	Fan Y, Liu Z, Xu G, Zhong H, Huang Z, Zhang Y, Wang J and Xu K 2014 Appl. Phys. Lett. 105 062108 doi: 10.1063/1.4893156
[21]	Lu M, Zhang G G, Fu K and Yu G H 2010 Chin. Phys. Lett. 27 052901 doi: 10.1088/0256-307X/27/5/052901
[22]	Yao C, Fu K, Wang G, Yu G and Lu M 2012 Phys. Status Solidi A 209 204 doi: 10.1002/pssa.201127446
[23]	Usui A, Sunakawa H, Kuroda N, Kimura A, Sakai A and Yamaguchi A A 1998 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), September 29-October 2, 1998, Chiba, Japan, pp. 17-21
[24]	Iwinska M, Sochacki T, Amilusik M, Kempisty P, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Smalc-Koziorowska J, Khapuridze A, Staszczak G, Grzegory I and Bockowski M 2016 J. Cryst. Growth 456 91 doi: 10.1016/j.jcrysgro.2016.08.043
[25]	Hofmann P, Krupinski M, Habel F, Leibiger G, Weinert B, Eichler S and Mikolajick T 2016 J. Cryst. Growth 450 61 doi: 10.1016/j.jcrysgro.2016.06.019
[26]	Oshima Y, Yoshida T, Watanabe K and Mishima T 2010 J. Cryst. Growth 312 3569 doi: 10.1016/j.jcrysgro.2010.09.036
[27]	Zvanut M E, Dashdorj J, Freitas J A, Glaser E R, Willoughby W R, Leach J H and Udwary K 2016 J. Electron. Mater. 45 2692 doi: 10.1007/s11664-016-4413-9
[28]	Vaudo R P, Xu X P, Salant A, Malcarne J and Brandes G R 2003 Phys. Status Solidi A-Appl. Res. 200 18 doi: 10.1002/pssa.200303273
[29]	Richter E, Gridneva E, Weyers M and Traenkle G 2016 J. Cryst. Growth 456 97 doi: 10.1016/j.jcrysgro.2016.05.016
[30]	Zhang R and Kuech T F 1998 Appl. Phys. Lett. 72 1611 doi: 10.1063/1.121144
[31]	Iwinska M, Piotrzkowski R, Litwin-Staszewska E, Sochacki T, Amilusik M, Fijalkowski M, Lucznik B and Bockowski M 2017 Appl. Phys. Express 10 011003 doi: 10.7567/APEX.10.011003
[32]	Richter E, Hennig C, Zeimer U, Wang L, Weyers M and Tränkle G 2006 Phys. Status Solidi A 203 1658 doi: 10.1002/pssa.200565420
[33]	Oshima Y, Yoshida T, Eri T, Shibata M and Mishima T 2006 Jpn. J. Appl. Phys. 45 7685 doi: 10.1143/JJAP.45.7685
[34]	Foronda H M, Romanov A E, Young E C, Roberston C A, Beltz G E and Speck J S 2016 J. Appl. Phys. 120 035104 doi: 10.1063/1.4959073
[35]	Xie J Q, Mita S, Rice A, Tweedie J, Hussey L, Collazo R and Sitar Z 2011 Appl. Phys. Lett. 98 202101 doi: 10.1063/1.3589978
[36]	Fritze S, Dadgar A, Witte H, Bugler M, Rohrbeck A, Blasing J, Hoffmann A and Krost A 2012 Appl. Phys. Lett. 100 122104 doi: 10.1063/1.3695172
[37]	Markurt T, Lymperakis L, Neugebauer J, Drechsel P, Stauss P, Schulz T, Remmele T, Grillo V, Rotunno E and Albrecht M 2013 Phys. Rev. Lett. 110 036103 doi: 10.1103/PhysRevLett.110.036103
[38]	Nakamura S, Mukai T and Senoh M 1992 Jpn. J. Appl. Phys. 31 2883 doi: 10.1143/JJAP.31.2883
[39]	Kirste R, Hoffmann M P, Sachet E, Bobea M, Bryan Z, Bryan I, Nenstiel C, Hoffmann A, Maria J P, Collazo R and Sitar Z 2013 Appl. Phys. Lett. 103 242107 doi: 10.1063/1.4848555
[40]	Gotz W, Kern R S, Chen C H, Liu H, Steigerwald D A and Fletcher R M 1999 Mater. Sci. Eng. B-Solid 59 211 doi: 10.1016/S0921-5107(98)00393-6
[41]	Wieneke M, Witte H, Lange K, Feneberg M, Dadgar A, Blasing J, Goldhahn R and Krost A 2013 Appl. Phys. Lett. 103 012103 doi: 10.1063/1.4812666
[42]	Kondo H, Oda S, Ogawa M and Zaima S 2008 3rd International SiGe, Ge and Related Compounds Symposium, October 12-17, 2008, Honolulu, USA, p. 717
[43]	Nenstiel C, Bugler M, Callsen G, Nippert F, Kure T, Fritze S, Dadgar A, Witte H, Blasing J, Krost A and Hoffmann A 2015 Phys. Status Solidi-R 9 716 doi: 10.1002/pssr.201510278
[44]	Xie J Q, Mita S, Hussey L, Rice A, Tweedie J, LeBeau J, Collazo R and Sitar Z 2011 Appl. Phys. Lett. 99 141916 doi: 10.1063/1.3647772
[45]	Iwinska M, Takekawa N, Ivanov V Y, Amilusik M, Kruszewski P, Piotrzkowski R, Litwin-Staszewska E, Lucznik B, Fijalkowski M, Sochacki T, Teisseyre H, Murakami H and Bockowski M 2017 J. Cryst. Growth 480 102 doi: 10.1016/j.jcrysgro.2017.10.016
[46]	Sang L W, Ren B, Sumiya M, Liao M Y, Koide Y, Tanaka A, Cho Y J, Harada Y, Nabatame T, Sekiguchi T, Usami S, Honda Y and Amano H 2017 Appl. Phys. Lett. 111 122102 doi: 10.1063/1.4994627
[47]	Le L C, Zhao D G, Jiang D S, Li L, Wu L L, Chen P, Liu Z S, Li Z C, Fan Y M, Zhu J J, Wang H, Zhang S M and Yang H 2012 Appl. Phys. Lett. 101 252110 doi: 10.1063/1.4772548
[48]	Hofer A, Benstetter G, Biberger R, Leirer C and Bruderl G 2013 Thin Solid Films 544 139 doi: 10.1016/j.tsf.2013.04.049
[49]	Montes Bajo M, Hodges C, Uren M J and Kuball M 2012 Appl. Phys. Lett. 101 033508 doi: 10.1063/1.4737904
[50]	Puzyrev Y S, Schrimpf R D, Fleetwood D M and Pantelides S T 2015 Appl. Phys. Lett. 106 053505 doi: 10.1063/1.4907675
[51]	Axelsson O, Billstrom N, Rorsman N and Thorsell M 2016 IEEE Microw. Wirel. Compon. Lett. 26 31 doi: 10.1109/LMWC.2015.2505641
[52]	Oshimura Y, Takeda K, Sugiyama T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A and Udagawa T 2010 8th International Conference on Nitride Semiconductors (ICNS), October 18-23, 2009, Jeju, South Korea, p. 1974
[53]	Martin G M, Farges J P, Jacob G, Hallais J P and Poiblaud G 1980 J. Appl. Phys. 51 2840 doi: 10.1063/1.327952
[54]	Jenny J R, Malta D P, Muller S G, Powell A R, Tsvetkov V F, Hobgood H M, Glass R C and Carter C H 2003 J. Electron. Mater. 32 432 doi: 10.1007/s11664-003-0173-4
[55]	Kizilyalli I C, Edwards A P, Aktas O, Prunty T and Bour D 2015 IEEE T. Electron. Dev. 62 414
[56]	Fujikura H, Konno T, Yoshida T and Horikiri F 2017 Jpn. J. Appl. Phys. 56 085503 doi: 10.7567/JJAP.56.085503
[57]	Maruska H P and Tietjen J J 1969 Appl. Phys. Lett. 15 327 doi: 10.1063/1.1652845
[58]	Lee M, Ahn C W, Vu T K O, Lee H U, Kim E K and Park S 2019 Sci. Rep.-UK 9 7128 doi: 10.1038/s41598-019-43583-y
[59]	Park S S, Park I W and Choh S H 2000 Jpn. J. Appl. Phys. Part. 2-Letters 39 L1141
[60]	Wong W S, Sands T and Cheung N W 1998 Appl. Phys. Lett. 72 599 doi: 10.1063/1.120816
[61]	Kelly M K, Vaudo R P, Phanse V M, Gorgens L, Ambacher O and Stutzmann M 1999 Jpn. J. Appl. Phys. Part. 2-Letters 38 L217
[62]	Usui A, Sunakawa H, Sakai A and Yamaguchi A A 1997 Jpn. J. Appl. Phys. Part. 2-Letters 36 L899
[63]	Sakai A, Sunakawa H and Usui A 1997 Appl. Phys. Lett. 71 2259 doi: 10.1063/1.120044
[64]	Motoki K, Okahisa T, Nakahata S, Matsumoto N, Kimura H, Kasai H, Takemoto K, Uematsu K, Ueno M, Kumagai Y, Koukitu A and Seki H 2002 J. Cryst. Growth 237 912
[65]	Oshima Y, Eri T, Shibata M, Sunakawa H, Kobayashi K, Ichihashi T and Usui A 2003 Jpn. J. Appl. Phys. Part. 2-Letters 42 L1
[66]	Liu J, Huang J, Gong X, Wang J, Xu K, Qiu Y, Cai D, Zhou T, Ren G and Yang H 2011 Crystengcomm 13 5929 doi: 10.1039/c1ce05292f
[67]	Vetterhoffer J and Weber J 1996 Phys. Rev. B 53 12835 doi: 10.1103/PhysRevB.53.12835
[68]	Wu S, Yang X, Zhang H, Shi L, Zhang Q, Shang Q, Qi Z, Xu Y, Zhang J, Tang N, Wang X, Ge W, Xu K and Shen B 2018 Phys. Rev. Lett. 121 145505 doi: 10.1103/PhysRevLett.121.145505
[69]	Reshchikov M A and Morkoc H 2005 J. Appl. Phys. 97 061301 doi: 10.1063/1.1868059
[70]	Shi J Y, Yu L P, Wang Y Z, Zhang G Y and Zhang H 2002 Appl. Phys. Lett. 80 2293 doi: 10.1063/1.1465531
[71]	Ng H M, Doppalapudi D, Moustakas T D, Weimann N G and Eastman L F 1998 Appl. Phys. Lett. 73 821 doi: 10.1063/1.122012
[72]	Weimann N G, Eastman L F, Doppalapudi D, Ng H M and Moustakas T D 1998 J. Appl. Phys. 83 3656 doi: 10.1063/1.366585
[73]	Zhao D G, Yang H, Zhu J J, Jiang D S, Liu Z S, Zhang S M, Wang Y T and Liang J W 2006 Appl. Phys. Lett. 89 112106 doi: 10.1063/1.2348740
[74]	Abdel-Motaleb I M and Korotkov R Y 2005 J. Appl. Phys. 97 093715 doi: 10.1063/1.1891278
[75]	Khromov S, Hemmingsson C, Monemar B, Hultman L and Pozina G 2014 J. Appl. Phys. 116 223503 doi: 10.1063/1.4903819
[76]	Shalish I, Kronik L, Segal C, Rosenwaks Y, Shapira Y, Tisch U and Salzman J 1999 Phys. Rev. B 59 9748 doi: 10.1103/PhysRevB.59.9748
[77]	Lyons J L, Janotti A and Van de Walle C G 2010 Appl. Phys. Lett. 97 152108 doi: 10.1063/1.3492841
[78]	Neugebauer J and Van de Walle C G 1996 Appl. Phys. Lett. 69 503 doi: 10.1063/1.117767
[79]	Chen H M, Chen Y F, Lee M C and Feng M S 1997 Phys. Rev. B 56 6942 doi: 10.1103/PhysRevB.56.6942
[80]	Elsner J, Jones R, Heggie M I, Sitch P K, Haugk M, Frauenheim T, Öberg S and Briddon P R 1998 Phys. Rev. B 58 12571 doi: 10.1103/PhysRevB.58.12571
[81]	Kang T S, Ren F, Gila B P, Pearton S J, Patrick E, Cheney D J, Law M and Zhang M L 2015 J. Vac. Sci. Technol. B 33 061202
[82]	Gu H, Ren G, Zhou T, Tian F, Xu Y, Zhang Y, Wang M, Zhang Z, Cai D, Wang J and Xu K 2016 J. Alloy. Compd. 674 218 doi: 10.1016/j.jallcom.2016.03.064
[83]	Valente G, Cavallotti C, Masi M and Carra S 2001 J. Cryst. Growth 230 247 doi: 10.1016/S0022-0248(01)01349-5
[84]	Hofmann P, Roder C, Habel F, Leibiger G, Beyer F C, Gartner G, Eichler S and Mikolajick T 2016 J. Phys. D 49 075502 doi: 10.1088/0022-3727/49/7/075502
[85]	Richter E, Stoica T, Zeimer U, Netzel C, Weyers M and Trankle G 2013 J. Electron. Mater. 42 820 doi: 10.1007/s11664-012-2373-2
[86]	Fomin A V, Nikolaev A E, Nikitina I P, Zubrilov A S, Mynbaeva M G, Kuznetsov N I, Kovarsky A P and Ber B J 2001 Phys. Status Solidi A-Appl. Res. 188 433 doi: 10.1002/1521-396X(200111)188:1<433::AID-PSSA433>3.0.CO;2-T
[87]	Noda S, Tanabe K, Yahiro T, Osawa T and Komiyama H 2004 J. Electrochem. Soc. 151 C399
[88]	Romano L T, Van de Walle C G, Ager J W, Gotz W and Kern R S 2000 J. Appl. Phys. 87 7745 doi: 10.1063/1.373529
[89]	Dadgar A, Veit P, Schulze F, Bläsing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R and Krost A 2007 Thin Solid Films 515 4356 doi: 10.1016/j.tsf.2006.07.100
[90]	Romanov A E and Speck J S 2003 Appl. Phys. Lett. 83 2569 doi: 10.1063/1.1613360
[91]	Brunner F, Mogilatenko A, Knauer A, Weyers M and Zettler J T 2012 J. Appl. Phys. 112 033503 doi: 10.1063/1.4739278
[92]	Moram M A, Kappers M J, Massabuau F, Oliver R A and Humphreys C J 2011 J. Appl. Phys. 109 073509 doi: 10.1063/1.3553841
[93]	Follstaedt D M, Lee S R, Allerman A A and Floro J A 2009 J. Appl. Phys. 105 083507 doi: 10.1063/1.3087515
[94]	Usikov A, Kovalenkov O V, Mastro M M, Tsvetkov D V, Pechnikov A I, Soukhoveev V A, Shapovalova Y V and Gainer G H 2003 Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, December 2-6, 2002, Boston, USA, p. 231
[95]	Munkholm A, Thompson C, Murty M V R, Eastman J A, Auciello O, Stephenson G B, Fini P, DenBaars S P and Speck J S 2000 Appl. Phys. Lett. 77 1626 doi: 10.1063/1.1309023
[96]	Tanaka S, Takeuchi M and Aoyagi Y 2000 Jpn. J. Appl. Phys. Part. 2-Lett. 39 L831
[97]	Neugebauer J 2003 Phys. Stat. Sol. (c) 1651
[98]	Neugebauer J, Zywietz T K, Scheffler M, Northrup J E, Chen H and Feenstra R M 2003 Phys. Rev. Lett. 90 056101 doi: 10.1103/PhysRevLett.90.056101
[99]	Rosa A L, Neugebauer J, Northrup J E, Lee C D and Feenstra R M 2002 Appl. Phys. Lett. 80 2008 doi: 10.1063/1.1452785
[100]	Oshima Y, Yoshida T, Eri T, Shibata M and Mishima T 2007 International Workshop on Nitride Semiconductors 2006 (IWN 2006), October 22-27, 2006, Kyoto, Japan, p. 2215
[101]	Schörmann J, Hille P, Schäfer M, Müßener J, Becker P, Klar P J, Kleine-Boymann M, Rohnke M, Mata M d l, Arbiol J, Hofmann D M, Teubert J and Eickhoff M 2013 J. Appl. Phys. 114 103505 doi: 10.1063/1.4820264
[102]	Walsh A, Da Silva J L F and Wei S H 2008 Phys. Rev. B 78 075211 doi: 10.1103/PhysRevB.78.075211
[103]	Wu J, Walukiewicz W, Shan W, Yu K M, Ager J W, Haller E E, Lu H and Schaff W J 2002 Phys. Rev. B 66 201403 doi: 10.1103/PhysRevB.66.201403
[104]	Cantu P, Wu F, Waltereit P, Keller S, Romanov A E, Mishra U K, DenBaars S P and Speck J S 2003 Appl. Phys. Lett. 83 674 doi: 10.1063/1.1595133
[105]	Yamane K, Matsubara T, Yamamoto T, Okada N, Wakahara A and Tadatomo K 2016 J. Appl. Phys. 119 045707 doi: 10.1063/1.4940914
[106]	Dadgar A, Blasing J, Diez A and Krost A 2011 Appl. Phys. Express 4 011001 doi: 10.1143/APEX.4.011001
[107]	Voronenkov V, Bochkareva N, Gorbunov R, Latyshev P, Lelikov Y, Rebane Y, Tsyuk A, Zubrilov A and Shreter Y 2013 Jpn. J. Appl. Phys. 52 08JE14
[108]	Leach J H, Wu M, Ni X, Li X, Xie J, Özgür Ü Morkoç H, Paskova T, Preble E, Evans K R and Lu C Z 2010 Appl. Phys. Lett. 96 102109 doi: 10.1063/1.3358192
[109]	Kubota M, Onuma T, Ishihara Y, Usui A, Uedono A and Chichibu S F 2009 J. Appl. Phys. 105 083542 doi: 10.1063/1.3110205
[110]	Gladkov P, Humlicek J, Hulicius E, Simecek T, Paskova T and Evans K 2010 J. Cryst. Growth 312 1205 doi: 10.1016/j.jcrysgro.2009.11.032
[111]	Malguth E, Hoffmann A and Phillips M R 2008 J. Appl. Phys. 104
[112]	Ohba Y and Hatano A 1994 J. Cryst. Growth 145 214 doi: 10.1016/0022-0248(94)91053-7
[113]	Heikman S, Keller S, Mates T, DenBaars S P and Mishra U K 2003 J. Cryst. Growth 248 513 doi: 10.1016/S0022-0248(02)01926-7
[114]	Malguth E, Hoffmann A, Gehlhoff W, Gelhausen O, Phillips M R and Xu X 2006 Phys. Rev. B 74 165202 doi: 10.1103/PhysRevB.74.165202
[115]	Maier K, Kunzer M, Kaufmann U, Schneider J, Monemar B, Akasaki I and Amano H 1994 17th International Conference on Defects in Semiconductors, July 18-23, 1993, Gmunden, Austria, p. 93 Maier K, Kunzer M, Kaufmann U, Schneider J, Monemar B, Akasaki I and Amano H 1994 17th International Conference on Defects in Semiconductors, July 18-23, 1993, Gmunden, Austria, p. 93 DOI: https://doi.org/10.4028/www.scientific.net/MSF.143-147.93 doi: https://doi.org/10.4028/www.scientific.net/msf.143-147.93
[116]	Heitz R, Maxim P, Eckey L, Thurian P, Hoffmann A, Broser I, Pressel K and Meyer B K 1997 Phys. Rev. B 55 4382
[117]	Malguth E, Hoffmann A and Xu X 2006 Phys. Rev. B 74 165201 doi: 10.1103/PhysRevB.74.165201
[118]	Zhang M, Zhou T F, Zhang Y M, Li B, Zheng S N, Huang J, Sun Y P, Ren G Q, Wang J F, Xu K and Yang H 2012 Appl. Phys. Lett. 100 041904 doi: 10.1063/1.3679133
[119]	Zhang Y, Wang J, Zheng S, Cai D, Xu Y, Wang M, Hu X, Zhao M and Xu K 2019 Appl. Phys. Express 12 074002 doi: 10.7567/1882-0786/ab2811
[120]	Walsh A, Da Silva J L F and Wei S H 2008 Phys. Rev. B 78 075211 doi: 10.1103/PhysRevB.78.075211
[121]	Yoshikawa M, Kunzer M, Wagner J, Obloh H, Schlotter P, Schmidt R, Herres N and Kaufmann U 1999 J. Appl. Phys. 86 4400 doi: 10.1063/1.371377
[122]	Xu S R, Hao Y, Zhang J C, Cao Y R, Zhou X W, Yang L A, Ou X X, Chen K and Mao W 2010 J. Cryst. Growth 312 3521 doi: 10.1016/j.jcrysgro.2010.09.026
[123]	Cruz S C, Keller S, Mates T E, Mishra U K and DenBaars S P 2009 J. Cryst. Growth 311 3817 doi: 10.1016/j.jcrysgro.2009.02.051
[124]	Tanaka T, Kaneda N, Mishima T, Kihara Y, Aoki T and Shiojima K 2015 Jpn. J. Appl. Phys. 54 041002 doi: 10.7567/JJAP.54.041002
[125]	Fujikura H, Konno T, Yoshida T and Horikiri F 2017 Jpn. J. Appl. Phys. 56 085503 doi: 10.7567/JJAP.56.085503
[126]	Tompkins R P, Khan M R, Green R, Jones K A and Leach J H 2016 J. Mater. Sci.: Mater. Electron. 27 6108 doi: 10.1007/s10854-016-4536-z
[127]	Polyakov A Y, Smirnov N B, Govorkov A V, Yugova T G, Cox H, Usikov A S, Helava H and Makarov Y 2014 J. Appl. Phys. 115 183706 doi: 10.1063/1.4876061
[128]	Sumiya M, Yoshimura K, Ohtsuka K and Fuke S 2000 Appl. Phys. Lett. 76 2098 doi: 10.1063/1.126267
[129]	Zywietz T K, Neugebauer J and Scheffler M 1999 Appl. Phys. Lett. 74 1695 doi: 10.1063/1.123658
[130]	Zywietz T, Neugebauer J and Scheffler M 1998 Appl. Phys. Lett. 73 487 doi: 10.1063/1.121909
[131]	Fichtenbaum N A, Mates T E, Keller S, DenBaars S P and Mishra U K 2008 J. Cryst. Growth 310 1124 doi: 10.1016/j.jcrysgro.2007.12.051

Growth and doping of bulk GaN by hydride vapor phase epitaxy

Growth and doping of bulk GaN by hydride vapor phase epitaxy

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 131

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201.
[2]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[3]	Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films[J]. 中国物理B, 2023, 32(3): 38101-038101.
[4]	Qidi Ren(任启迪), Kang Lai(赖康), Jiahao Chen(陈家浩), Xiaoxiang Yu(余晓翔), and Jiayu Dai(戴佳钰). A novel monoclinic phase and electrically tunable magnetism of van der Waals layered magnet CrTe₂[J]. 中国物理B, 2023, 32(2): 27201-027201.
[5]	Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302.
[6]	Yunpeng Jia(贾云鹏), Zhengguo Liang(梁正国), Haolin Pan(潘昊霖), Qing Wang(王庆), Qiming Lv(吕崎鸣), Yifei Yan(严轶非), Feng Jin(金锋), Dazhi Hou(侯达之), Lingfei Wang(王凌飞), and Wenbin Wu(吴文彬). Bismuth doping enhanced tunability of strain-controlled magnetic anisotropy in epitaxial Y₃Fe₅O₁₂(111) films[J]. 中国物理B, 2023, 32(2): 27501-027501.
[7]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[8]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[9]	Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科). Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy[J]. 中国物理B, 2023, 32(2): 26802-026802.
[10]	Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.
[11]	Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103.
[12]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[13]	Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)^†, and Mei-Ling Sun(孙美玲)^‡. High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance[J]. 中国物理B, 2022, 31(9): 98103-098103.
[14]	Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB[J]. 中国物理B, 2022, 31(9): 98104-098104.
[15]	Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li₂S and Li₃PS₄ with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203.