中国物理B ›› 2016, Vol. 25 ›› Issue (5): 58401-058401.doi: 10.1088/1674-1056/25/5/058401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕)   

  1. 1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;
    2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 收稿日期:2015-12-14 修回日期:2016-01-18 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Ou-Peng Li E-mail:lopuestc@gmail.com
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Ou-Peng Li(李欧鹏)1, Yong Zhang(张勇)1, Rui-Min Xu(徐锐敏)1, Wei Cheng(程伟)2, Yuan Wang(王元)2, Bing Niu(牛斌)2, Hai-Yan Lu(陆海燕)2   

  1. 1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;
    2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • Received:2015-12-14 Revised:2016-01-18 Online:2016-05-05 Published:2016-05-05
  • Contact: Ou-Peng Li E-mail:lopuestc@gmail.com
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

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摘要：

Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

关键词: terahertz amplifier, InP double heterojunction bipolar transistor, inverted microstrip line, monolithic integrated circuit

Abstract:

Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

Key words: terahertz amplifier, InP double heterojunction bipolar transistor, inverted microstrip line, monolithic integrated circuit

中图分类号:  (Amplifiers)

  • 84.30.Le
07.57.-c (Infrared, submillimeter wave, microwave and radiowave instruments and equipment) 85.30.De (Semiconductor-device characterization, design, and modeling)