中国物理B ›› 2022, Vol. 31 ›› Issue (5): 58801-058801.doi: 10.1088/1674-1056/ac4749

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GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Xin-Miao Zhu(朱鑫淼)1, Min Cui(崔敏)1,†, Yu Wang(汪宇)2, Tian-Jing Yu(于添景)1, Jin-Xiang Deng(邓金祥)1, and Hong-Li Gao(高红丽)1   

  1. 1 Faculty of Science, Beijing University of Technology, Beijing 100124, China;
    2 Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China
  • 收稿日期:2021-07-23 修回日期:2021-11-15 发布日期:2022-04-09
  • 通讯作者: Min Cui,E-mail:mcui@bjut.edu.cn E-mail:mcui@bjut.edu.cn
  • 基金资助:
    Project supported by the Beijing Natural Science Foundation Program,China (Grant No.4192016).

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Xin-Miao Zhu(朱鑫淼)1, Min Cui(崔敏)1,†, Yu Wang(汪宇)2, Tian-Jing Yu(于添景)1, Jin-Xiang Deng(邓金祥)1, and Hong-Li Gao(高红丽)1   

  1. 1 Faculty of Science, Beijing University of Technology, Beijing 100124, China;
    2 Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China
  • Received:2021-07-23 Revised:2021-11-15 Published:2022-04-09
  • Contact: Min Cui,E-mail:mcui@bjut.edu.cn E-mail:mcui@bjut.edu.cn
  • About author:2021-12-31
  • Supported by:
    Project supported by the Beijing Natural Science Foundation Program,China (Grant No.4192016).

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摘要： Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

关键词: GeSn, thermophotovoltaic device, active layer, photovoltaic cell

Abstract: Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

Key words: GeSn, thermophotovoltaic device, active layer, photovoltaic cell

中图分类号:  (Modeling and analysis)

  • 88.40.fc
84.60.Rb (Thermoelectric, electrogasdynamic and other direct energy conversion) 02.60.-x (Numerical approximation and analysis) 78.40.Fy (Semiconductors)