›› 2015, Vol. 24 ›› Issue (2): 24211-024211.doi: 10.1088/1674-1056/24/2/024211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

张东亮, 成步文, 薛春来, 张旭, 丛慧, 刘智, 张广泽, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2014-07-13 修回日期:2014-09-04 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the Major State Basic Research Development Program of China (Grant No. 2013CB632103), the National High-Technology Research and Development Program of China (Grant No. 2012AA012202), and the National Natural Science Foundation of China (Grant Nos. 61177038 and 61176013).

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Zhang Dong-Liang (张东亮), Cheng Bu-Wen (成步文), Xue Chun-Lai (薛春来), Zhang Xu (张旭), Cong Hui (丛慧), Liu Zhi (刘智), Zhang Guang-Ze (张广泽), Wang Qi-Ming (王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2014-07-13 Revised:2014-09-04 Online:2015-02-05 Published:2015-02-05
  • Contact: Cheng Bu-Wen E-mail:cbw@red.semi.ac.cn
  • Supported by:
    Project supported by the Major State Basic Research Development Program of China (Grant No. 2013CB632103), the National High-Technology Research and Development Program of China (Grant No. 2012AA012202), and the National Natural Science Foundation of China (Grant Nos. 61177038 and 61176013).

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摘要： Optical gain characteristics of Ge1-xSnx are simulated systematically. With an injection carrier concentration of 5×1018/cm3 at room temperature, the maximal optical gain of Ge0.922Sn0.078 alloy (with n-type doping concentration being 5×1018/cm3) reaches 500 cm-1. Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a maximal net optical gain. A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density Jth are 6.47 kA/cm2 (temperature: 200 K, and λ =2050 nm), 10.75 kA/cm2 (temperature: 200 K, and λ =2000 nm), and 23.12 kA/cm2 (temperature: 300 K, and λ =2100 nm), respectively. The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.

关键词: infrared, GeSn alloys, semiconductor lasers, optoelectronic

Abstract: Optical gain characteristics of Ge1-xSnx are simulated systematically. With an injection carrier concentration of 5×1018/cm3 at room temperature, the maximal optical gain of Ge0.922Sn0.078 alloy (with n-type doping concentration being 5×1018/cm3) reaches 500 cm-1. Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a maximal net optical gain. A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density Jth are 6.47 kA/cm2 (temperature: 200 K, and λ =2050 nm), 10.75 kA/cm2 (temperature: 200 K, and λ =2000 nm), and 23.12 kA/cm2 (temperature: 300 K, and λ =2100 nm), respectively. The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.

Key words: infrared, GeSn alloys, semiconductor lasers, optoelectronic

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.70.Hj (Laser materials) 78.40.Fy (Semiconductors) 95.85.Jq (Near infrared (0.75-3 μm))