Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

doi:10.1088/1674-1056/ac1570

中国物理B ›› 2021, Vol. 30 ›› Issue (10): 107303-107303.doi: 10.1088/1674-1056/ac1570

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

Ge Tang (唐鸽)¹, Ying-Jie Qin(覃英杰)^2,†, Shi-Shi Xie(谢诗诗)², and Meng-Hao Sun(孙梦豪)²

1 College of Science, Shaoyang University, Hunan 422004, China;
2 College of Science, Guilin University of Technology, Guilin 541004, China

收稿日期:2021-02-23 修回日期:2021-06-18 接受日期:2021-07-18 发布日期:2021-09-30
通讯作者: Ying-Jie Qin E-mail:yijiqi20@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11864009).

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

Ge Tang (唐鸽)¹, Ying-Jie Qin(覃英杰)^2,†, Shi-Shi Xie(谢诗诗)², and Meng-Hao Sun(孙梦豪)²

1 College of Science, Shaoyang University, Hunan 422004, China;
2 College of Science, Guilin University of Technology, Guilin 541004, China

Received:2021-02-23 Revised:2021-06-18 Accepted:2021-07-18 Published:2021-09-30
Contact: Ying-Jie Qin E-mail:yijiqi20@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11864009).

摘要/Abstract

摘要： We theoretically investigate the wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic (FM) stripes on the top and the bottom of GaAs/Al_xGa_1-xAs heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional (2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias, which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.

关键词: magnetic microstructure, bias, wave vector filtering (WVF) effect, electrically-tunable momentum filter

Abstract: We theoretically investigate the wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic (FM) stripes on the top and the bottom of GaAs/Al_xGa_1-xAs heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional (2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias, which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.

Key words: magnetic microstructure, bias, wave vector filtering (WVF) effect, electrically-tunable momentum filter

中图分类号: (Electronic transport in interface structures)

73.40.-c

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.40.Gk (Tunneling)

Ge Tang (唐鸽), Ying-Jie Qin(覃英杰), Shi-Shi Xie(谢诗诗), and Meng-Hao Sun(孙梦豪). Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure[J]. 中国物理B, 2021, 30(10): 107303-107303.

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Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

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