A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

doi:10.1088/1674-1056/ac0e23

中国物理B ›› 2022, Vol. 31 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/ac0e23

A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

Wei-Zhong Chen(陈伟中)^1,2, Hai-Feng Qin(秦海峰)^1,†, Feng Xu(许峰)¹, Li-Xiang Wang(王礼祥)¹, Yi Huang(黄义)¹, and Zheng-Sheng Han(韩郑生)^2,3

1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
3 Department of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2021-05-10 修回日期:2021-06-22 接受日期:2021-06-24 出版日期:2022-01-13 发布日期:2022-01-18
通讯作者: Hai-Feng Qin E-mail:1531815309@qq.com

A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

Wei-Zhong Chen(陈伟中)^1,2, Hai-Feng Qin(秦海峰)^1,†, Feng Xu(许峰)¹, Li-Xiang Wang(王礼祥)¹, Yi Huang(黄义)¹, and Zheng-Sheng Han(韩郑生)^2,3

1 College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
3 Department of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-05-10 Revised:2021-06-22 Accepted:2021-06-24 Online:2022-01-13 Published:2022-01-18
Contact: Hai-Feng Qin E-mail:1531815309@qq.com

摘要/Abstract

摘要： A novel 4H-SiC merged P-I-N Schottky (MPS) with floating back-to-back diode (FBD), named FBD-MPS, is proposed and investigated by the Sentaurus technology computer-aided design (TCAD) and analytical model. The FBD features a trench oxide and floating P-shield, which is inserted between the P+/N-(PN) junction and Schottky junction to eliminate the shorted anode effect. The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently. The FBD reduces not only the V_turn to suppress the snapback effect but also the V_on at bipolar operation. The results show that the snapback can be completely eliminated, and the maximum electric field (E_max) is shifted from the Schottky junction to the FBD in the breakdown state.

关键词: 4H-SiC, merged P-I-N Schottky (MPS), snapback effect, turnover voltage, floating back-to-back diode (FBD)

Abstract: A novel 4H-SiC merged P-I-N Schottky (MPS) with floating back-to-back diode (FBD), named FBD-MPS, is proposed and investigated by the Sentaurus technology computer-aided design (TCAD) and analytical model. The FBD features a trench oxide and floating P-shield, which is inserted between the P+/N-(PN) junction and Schottky junction to eliminate the shorted anode effect. The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently. The FBD reduces not only the V_turn to suppress the snapback effect but also the V_on at bipolar operation. The results show that the snapback can be completely eliminated, and the maximum electric field (E_max) is shifted from the Schottky junction to the FBD in the breakdown state.

Key words: 4H-SiC, merged P-I-N Schottky (MPS), snapback effect, turnover voltage, floating back-to-back diode (FBD)

中图分类号: (Semiconductor devices)

85.30.-z

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.30.De (Semiconductor-device characterization, design, and modeling) 72.20.Ht (High-field and nonlinear effects)

Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503.

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A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

A 4H-SiC merged P-I-N Schottky with floating back-to-back diode

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