Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

doi:10.1088/1674-1056/abff30

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 118101-118101.doi: 10.1088/1674-1056/abff30

Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

Jian-Kai Xu(徐健凯)^1,2,3,4, Li-Juan Jiang(姜丽娟)^1,2,3,4,†, Qian Wang(王茜)^1,2,3,4, Quan Wang(王权)^1,5,6, Hong-Ling Xiao(肖红领)^1,2,3,4, Chun Feng(冯春)^1,2,3,4, Wei Li(李巍)^1,2,3,4, and Xiao-Liang Wang(王晓亮)^1,2,3,4

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;
5 The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
6 Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

收稿日期:2021-03-19 修回日期:2021-04-15 接受日期:2021-05-08 出版日期:2021-10-13 发布日期:2021-11-06
通讯作者: Li-Juan Jiang, Xiao-Liang Wang E-mail:ljjiang@semi.ac.cn;xlwang@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402900) and the National Natural Sciences Foundation of China (Grant No. 62074144).

Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;
5 The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
6 Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

Received:2021-03-19 Revised:2021-04-15 Accepted:2021-05-08 Online:2021-10-13 Published:2021-11-06
Contact: Li-Juan Jiang, Xiao-Liang Wang E-mail:ljjiang@semi.ac.cn;xlwang@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402900) and the National Natural Sciences Foundation of China (Grant No. 62074144).

摘要/Abstract

摘要： The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been studied. By increasing the nitrogen flow whose outlet is located in the center of the MOCVD (metal-organic chemical vapor deposition) gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer, the GaN layer has extended more adequately on Si substrate. In the meantime, the surface morphology has been greatly improved. Both the AlN and GaN crystal quality uniformity has been improved. X-ray diffraction results showed that the GaN (0002) XRD FWHMs (full width at half maximum) decreased from 579 arcsec～ 1655 arcsec to around 420 arcsec.

关键词: GaN extension, MOCVD, nitrogen flow, growth temperature

Abstract: The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been studied. By increasing the nitrogen flow whose outlet is located in the center of the MOCVD (metal-organic chemical vapor deposition) gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer, the GaN layer has extended more adequately on Si substrate. In the meantime, the surface morphology has been greatly improved. Both the AlN and GaN crystal quality uniformity has been improved. X-ray diffraction results showed that the GaN (0002) XRD FWHMs (full width at half maximum) decreased from 579 arcsec～ 1655 arcsec to around 420 arcsec.

Key words: GaN extension, MOCVD, nitrogen flow, growth temperature

中图分类号: (III-V semiconductors)

81.05.Ea

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.70.Dm (X-ray absorption spectra)

Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮). Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si[J]. 中国物理B, 2021, 30(11): 118101-118101.

参考文献

[1] Hansen M, Fini P, Zhao L, Abare A C, Coldren L A, Speck J S and DenBaars S P 2000 Appl. Phys. Lett. 76 529
[2] Wu X H, Fini P, Tarsa E J, Heying B, Keller S, Mishra U K, DenBaars S P and Speck J S 1998 J. Cryst. Growth 189 231
[3] Lahréche H, Leroux M, Laügt M, Vaille M, Beaumont B and Gibart P 2000 J. Appl. Phys. 87 577
[4] Nakada N, Nakaji M, Ishikawa H, Egawa T, Umeno M and Jimbo T 2000 Appl. Phys. Lett. 76 1804
[5] Wu Y F, Kapolnek D, Ibbetson J P, Parikh P, Keller B P and Mishra U K 2001 IEEE Trans. Electron. Dev. 48 586
[6] Okumura H 2006 Jpn. J. Appl. Phys. 45 7565
[7] Umesh K. Mishra, Shen L K, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
[8] Wang X L, Chen T S, Xiao H L, Tang J, Ran J X, Zhang M L, Feng C, Hou Q F, Wei M, Jiang L J, Li J M and Wang Z G 2009 Solid-State Electron. 53 332
[9] Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F, Koleske D D, Wickenden A E and Henry R L 2003 Appl. Phys. Lett. 83 1650
[10] Wang X L, Chen T S, Xiao H L, Wang C M, Hu G X, Luo W J, Tang J, Guo L C and Li J M 2008 Solid-State Electron. 52 926
[11] Alamo J A D and Joh J 2009 Microelectron. Reliab. 49 1200
[12] Kohn E and Medjdoub F 2007 International Workshop on Physics of Semiconductor Devices, December 16-20, 2007, Mumbai, India, p. 311
[13] Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G and Khan M A 2006 IEEE Electron. Dev. Lett. 27 716
[14] Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Shur M S, Gaska R and Khan M Asif 2001 Appl. Phys. Lett. 79 2651
[15] Anderson T J, Tadjer M J, Hite J K, Greenlee J D, Koehler A D, Hobart K D and Kub F J 2015 IEEE Electron. Dev. Lett. 37 28
[16] Nakamura and Shuji 1991 Jpn. J. Appl. Phys. 30 1705
[17] Kai C, Leys M, Degroote S, Daele B V, Boeykens S, Derluyn J, Germain M, Tendeloo G V, Engelen J and Borghs G 2006 J. Electron. Mater. 35 592
[18] Luo W J, Wang X L, Guo L C, Xiao H L, Wang C M, Ran J X, Li J P and Li J M 2008 Microelectron. J. 39 1710
[19] Wei M, Wang Xl, Pan X, Xiao H L, Wang C M, Hou Q F and Wang Z G 2011 Mater. Sci. Semicon. Process. 14 97
[20] Wei M, Wang X L, Pan X, Xiao H L, Wang C M, Yang C B and Wang Z G 2011 J. Mater. Sci. Mater. Electron. 22 1028
[21] Wei M, Wang X L, Xiao H L, Wang C M, Pan X, Hou Q F and Wang Z G 2011 Chin. Phys. Lett. 28 048102
[22] Nikishin S A, Faleev N N, Antipov V G, Francoeur S, Grave de Peralta L, Seryogin G A, Temkin H, Prokofyeva T I, Holtz M and Chu S N G 1999 Appl. Phys. Lett. 75 2073
[23] Arslan E, Ozturk M K, Teke A, Ozcelik S and Ozbay E 2008 J. Phys. D: Appl. Phys. 41 155317
[24] Chen P, Zhang R, Zhao Z M, Xi D J, Shen B, Chen Z Z, Zhou Y G, Xie S Y, Lu W F and Zheng Y D 2001 J. Cryst. Growth 225 150
[25] Kim M H, Do Y G, Kang H C, Noh D Y and Park S J 2001 Appl. Phys. Lett. 79 2713
[26] Pinos A, Tan W S, Chitnis A, Nishikawa A, Groh L, Hu C Y, Murad S and Lutgen S 2014 Phys. Status Solidi C 11 624
[27] Ji P F, Yang X L, Feng Y X, Cheng J P, Zhang J, Hu A Q, Song C Y, Wu S, Shen J F, Tang J, Tao C, Pan Y B, Wang X Q and Shen B 2017 Superlattice Microst. 104 112
[28] Lee I H, Lim S J and Park Y 2002 J. Cryst. Growth 235 73
[29] Krost A and Dadgar A 2002 Phys. Stat. Sol. 194 361
[30] Xiong J J, Tang J J, Liang T, Wang Y, Xue C Y, Shi W L and Zhang W D 2010 Appl. Surf. Sci. 257 1161
[31] Lin J H, Huang S J, Su Y K and Hsu C W 2013 J. Cryst. Growth 370 273
[32] Feng Y X, Wei H Y, Yang S Y, Chen Z, Wang L S, Kong S S, Zhao G J and Liu X L 2014 Sci. Rep. 4 6416
[33] Lu Y, Liu X L, Wang X H, Lu D C, Li D B, Han X X, Cong G W and Wang Z G 2014 J. Cryst. Growth 263 4

Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

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