Investigation of single event effect in 28-nm system-on-chip with multi patterns

doi:10.1088/1674-1056/ab99b8

中国物理B ›› 2020, Vol. 29 ›› Issue (10): 108504-.doi: 10.1088/1674-1056/ab99b8

Wei-Tao Yang(杨卫涛)¹^,⁴, Yong-Hong Li(李永宏)¹^,†(), Ya-Xin Guo(郭亚鑫)¹, Hao-Yu Zhao(赵浩昱)¹, Yang Li(李洋)¹, Pei Li(李培)¹, Chao-Hui He(贺朝会)¹, Gang Guo(郭刚)², Jie Liu(刘杰)³, Sheng-Sheng Yang(杨生胜)⁵, Heng An(安恒)⁵

收稿日期:2020-05-07 修回日期:2020-05-19 接受日期:2020-06-05 出版日期:2020-10-05 发布日期:2020-10-05
通讯作者: Yong-Hong Li(李永宏)

Investigation of single event effect in 28-nm system-on-chip with multi patterns

Wei-Tao Yang(杨卫涛)^1,4, Yong-Hong Li(李永宏)^1,†, Ya-Xin Guo(郭亚鑫)¹, Hao-Yu Zhao(赵浩昱)¹, Yang Li(李洋)¹, Pei Li(李培)¹, Chao-Hui He(贺朝会)¹, Gang Guo(郭刚)², Jie Liu(刘杰)³, Sheng-Sheng Yang(杨生胜)⁵, and Heng An(安恒)⁵

¹ School of Nuclear Science & Technology, Xi’an Jiaotong University, Xi’an 710049, China
² National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
³ Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
⁴ Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino 10129, Italy
⁵ Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China

Received:2020-05-07 Revised:2020-05-19 Accepted:2020-06-05 Online:2020-10-05 Published:2020-10-05
Contact: ^†Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn
About author:
†Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn
* Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, and 11690043), the Fund from Innovation Center of Radiation Application (Grant No. KFZC2019050321), the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics (Grant No. ZWK1804), and the Program of China Scholarships Council (Grant No. 201906280343).

摘要/Abstract

Abstract:

Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.

Key words: system-on-chip, heavy ion, single event effect

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

21.60.Ka (Monte Carlo models)

Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏), Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), Heng An(安恒). [J]. 中国物理B, 2020, 29(10): 108504-.

Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒). Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chin. Phys. B, 2020, 29(10): 108504-.

图/表 14

参考文献 33

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Facility	Ions	Energy/MeV	LET/MeV⋅cm²⋅mg⁻¹	Range in silicon/μm
	Cl	160	13.1	46.0
HI-13	Si	135	9.3	50.7
	C	80	1.7	127.1
HIRFL	Ta	1697.4	78.3	99.3

LET/MeV⋅cm²⋅mg⁻¹	CPU pattern	Data test	SEU	SEFI
13.1	AMP	Static	504	44
13.1	SP	Dynamic	175	33
9.3	AMP	Static	252	38
9.3	SP	Dynamic	124	26
1.7	AMP	Static	91	7
1.7	SP	Dynamic	40	4

CPU pattern	Data test	Fluence/cm⁻²
AMP	Dynamic	2.1 × 10⁵
SP	Static	3.0 × 10⁵
SP	Dynamic	2.5 × 10⁵

CPU pattern	Data test	SEU	SEFI
AMP	Dynamic	284	47
SP	Static	1277	33
SP	Dynamic	254	41

	σ_sat/cm²⋅bit⁻¹	L_th/MeV⋅cm²⋅mg⁻¹	W	S
Static cross section fitting	1.9 × 10⁻⁸	0.55	35	1.98
Dynamic cross section fitting	3.7 × 10⁻⁹	0.55	29	1.87

Investigation of single event effect in 28-nm system-on-chip with multi patterns

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	Bit error/bit⁻¹⋅day⁻¹	Device error/device⁻¹⋅day⁻¹
Static	2.46 × 10⁻⁸	5.16 × 10⁻²
Dynamic	1.35 × 10⁻⁸	2.83 × 10⁻²

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