Comparison study of GaN films grown on porous andplanar GaN templates

doi:10.1088/1674-1056/ab6c48

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38103-038103.doi: 10.1088/1674-1056/ab6c48

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Comparison study of GaN films grown on porous andplanar GaN templates

Shan Ding(丁姗), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓)

Key Laboratory of Advanced Photonic&Electronic Materials, School of Electronic Science&Engineering, Nanjing University, Nanjing 210093, China

收稿日期:2019-11-24 修回日期:2020-01-10 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Xiang-Qian Xiu, Rong Zhang E-mail:xqxiu@nju.edu.cn;rzhang@nju.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Comparison study of GaN films grown on porous andplanar GaN templates

Key Laboratory of Advanced Photonic&Electronic Materials, School of Electronic Science&Engineering, Nanjing University, Nanjing 210093, China

Received:2019-11-24 Revised:2020-01-10 Online:2020-03-05 Published:2020-03-05
Contact: Xiang-Qian Xiu, Rong Zhang E-mail:xqxiu@nju.edu.cn;rzhang@nju.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

摘要/Abstract

摘要： The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy (HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence (PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga₂O₃ film as a novel promising template is suitable for the growth of stress-free GaN films.

关键词: GaN, porous template, stress

Abstract: The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy (HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence (PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga₂O₃ film as a novel promising template is suitable for the growth of stress-free GaN films.

Key words: GaN, porous template, stress

中图分类号: (III-V semiconductors)

81.05.Ea

81.05.Rm (Porous materials; granular materials) 83.85.St (Stress relaxation ?)

丁姗, 李悦文, 修向前, 华雪梅, 谢自力, 陶涛, 陈鹏, 刘斌, 张荣, 郑有炓. Comparison study of GaN films grown on porous andplanar GaN templates[J]. 中国物理B, 2020, 29(3): 38103-038103.

Shan Ding(丁姗), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Peng Chen(陈鹏), Bin Liu(刘斌), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Comparison study of GaN films grown on porous andplanar GaN templates[J]. Chin. Phys. B, 2020, 29(3): 38103-038103.

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Comparison study of GaN films grown on porous andplanar GaN templates

Comparison study of GaN films grown on porous andplanar GaN templates

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