Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

doi:10.1088/1674-1056/28/8/088503

中国物理B ›› 2019, Vol. 28 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/28/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions

Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华)

State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

收稿日期:2019-01-23 修回日期:2019-03-03 出版日期:2019-08-05 发布日期:2019-08-05
通讯作者: Zhen-Ping Wu, Wei-Hua Tang E-mail:zhenpingwu@bupt.edu.cn;whtang@bupt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 61774019, 61704153, and 11404029), the Fund from the State Key Laboratory of Information Photonics and Optical Communications (BUPT), China, and the Fundamental Research Funds for the Central Universities, China.

Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions

Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华)

State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

Received:2019-01-23 Revised:2019-03-03 Online:2019-08-05 Published:2019-08-05
Contact: Zhen-Ping Wu, Wei-Hua Tang E-mail:zhenpingwu@bupt.edu.cn;whtang@bupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51572033, 61774019, 61704153, and 11404029), the Fund from the State Key Laboratory of Information Photonics and Optical Communications (BUPT), China, and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要： Heterojunctions composed of β-Ga₂O₃ and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 10⁵. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.

关键词: Ga₂O₃, solar blind photodetector, heterojunction, self-powered

Abstract: Heterojunctions composed of β-Ga₂O₃ and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 10⁵. Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.

Key words: Ga₂O₃, solar blind photodetector, heterojunction, self-powered

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 67.30.hr (Films) 71.20.Nr (Semiconductor compounds)

马晓菲, 黄元琪, 支钰崧, 王霞, 李培刚, 吴真平, 唐为华. Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions[J]. 中国物理B, 2019, 28(8): 88503-088503.

Xiao-Fei Ma(马晓菲), Yuan-Qi Huang(黄元琪), Yu-Song Zhi(支钰崧), Xia Wang(王霞), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), Wei-Hua Tang(唐为华). Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions[J]. Chin. Phys. B, 2019, 28(8): 88503-088503.

参考文献 35

[1]	Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433 doi: 10.1063/1.362677
[2]	Guo D Y, Zhao X L, Zhi Y S, Cui W, Huang Y Q, An Y H, Li P G, Wu Z P and Tang W H 2016 Mater. Lett. 164 364 doi: 10.1016/j.matlet.2015.11.001
[3]	Li W H, Zhao X L, Zhi Y S, Zhang X H, Chen Z W, Chu X L, Yang H J, Wu Z P and Tang W H 2018 Appl. Opt. 57 538 doi: 10.1364/AO.57.000538
[4]	Pei J N, Jiang D Y, Tian C G, Guo Z X, Liu R S, Sun L, Qin J M, Hou J H, Zhao J X, Liang Q C and Gao S 2015 Acta Phys. Sin. 64 067802 (in Chinese)
[5]	Zheng J J, Wang Y R, Yu K H, Xu X X, Sheng X X, Hu E T and Wei W 2018 Acta Phys. Sin. 67 118502 (in Chinese)
[6]	Li J J, Gao Z Y, Xue X W, Li H M, Deng J, Cui B F and Zou D S 2016 Acta Phys. Sin. 65 118104 (in Chinese)
[7]	Chen H Y, Liu K W, Hu L F, Al-Ghamdi A A and Fang X S 2015 Mater. Today 18 493 doi: 10.1016/j.mattod.2015.06.001
[8]	Brown D M, Fedison J B, Hibshman J R, Kretchmer J W, Lombardo L, Matocha K S and Sandvik P M 2005 IEEE Sens. J. 5 983 doi: 10.1109/JSEN.2005.854143
[9]	Vert A, Soloviev S and Sandvik P 2009 Phys. Status Solidi 206 2468 doi: 10.1002/pssa.200925118
[10]	Jiang H, Egawa T and Ishikawa H 2006 IEEE Photon. Technol. Lett. 18 1353 doi: 10.1109/LPT.2006.877351
[11]	Tut T, Gokkavas M, Inal A and Ozbay E 2007 Appl. Phys. Lett. 90 163506 doi: 10.1063/1.2724926
[12]	Zhang W, Xu J, Ye W, Li Y, Qi Z Q, Dai J N, Wu Z H, Chen C Q, Yin J, Li J, Jiang H and Fang Y Y 2015 Appl. Phys. Lett. 106 021112 doi: 10.1063/1.4905929
[13]	Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B and Lin Z 2011 Appl. Phys. Lett. 98 221112 doi: 10.1063/1.3596479
[14]	Fan M M, Liu K W, Chen X, Wang X, Zhang Z Z, Li B H and Shen D Z 2015 Acs Appl. Mater. Inter. 7 20600 doi: 10.1021/acsami.5b04671
[15]	Li P G, Shi H Z, Chen K, Guo D Y, Cui W, Zhi Y S, Wang S L, Wu Z P, Chen Z W and Tang W H 2017 J. Mater. Chem. C 5 10562 doi: 10.1039/C7TC03746E
[16]	Oshima T, Okuno T, Arai N, Suzuki N, Ohira S and Fujita S 2008 Appl. Phys. Express 1 011202 doi: 10.1143/APEX.1.011202
[17]	Wu Z P, Bai G X, Qu Y Y, Guo D Y, Li L H, Li P G, Hao J H and Tang W H 2016 Appl. Phys. Lett. 108 211903 doi: 10.1063/1.4952618
[18]	Guo D, Wu Z, Li P, An Y, Han L, Guo X, Hui Y, Wang G, Sun C and Li L 2014 Opt. Mater. Express 4 1067 doi: 10.1364/OME.4.001067
[19]	Li Y, Tokizono T, Liao M, Miao Z, Koide Y, Yamada I and Delaunay J J 2010 Adv. Funct. Mater. 20 3972 doi: 10.1002/adfm.201001140
[20]	Wang X, Chen Z W, Guo D Y, Zhang X, Wu Z P, Li P G and Tang W H 2018 Opt. Mater. Express 8 2918 doi: 10.1364/OME.8.002918
[21]	Peng Y, Zhang Y, Chen Z, Guo D, Zhang X, Li P, Wu Z and Tang W 2018 IEEE Photon. Technolnol. Lett. 30 993 doi: 10.1109/LPT.2018.2826560
[22]	Liu, Z, Li, P G, Zhi, Y S, Wang, X L, Chu, X L and Tang W H 2019 Chin. Phys. B 28 017105 doi: 10.1088/1674-1056/28/1/017105
[23]	Sasaki K, Higashiwaki M, Kuramata A, Masui T and Yamakoshi S 2013 IEEE Electron. Dev. Lett. 34 493 doi: 10.1109/LED.2013.2244057
[24]	Fan P, Chettiar U K, Cao L, Afshinmanesh F, Engheta N and Brongersma M L 2012 Nat. Photon. 6 380 doi: 10.1038/nphoton.2012.108
[25]	Qu Y Y, Wu Z P, Ai M L, Guo D Y, An Y H, Yang H J, Li L H and Tang W H 2016 J. Alloy. Compd. 680 247 doi: 10.1016/j.jallcom.2016.04.134
[26]	An Y H, Guo D Y, Li S Y, Wu Z P, Huang Y Q, Li P G, Li L H and Tang W H 2016 J. Phys. D: Appl. Phys. 49 285111 doi: 10.1088/0022-3727/49/28/285111
[27]	Feng W, Wang X, Zhang J, Wang L, Zheng W, Hu P, Cao W and Yang B J 2014 J. Mater. Chem. C 2 3254 doi: 10.1039/C3TC31899K
[28]	Guo D Y, Su Y, Shi H Z, Li P G, Zhao N, Ye J H, Wang S L, Liu A P, Chen Z W, Li C R and Tang W H 2018 ACS Nano 12 12827 doi: 10.1021/acsnano.8b07997
[29]	Guo D Y, Li P G, Chen Z W, Wu Z P and Tang W H 2019 Acta Phys. Sin. 68 078501 (in Chinese)
[30]	Guo X C, Hao N H, Guo D Y, Wu Z P, An Y H, Chu X L, Li L H, Li P G, Lei M and Tang W H 2016 J. Alloys Compd. 660 136 doi: 10.1016/j.jallcom.2015.11.145
[31]	Guo D, Liu H, Li P, Wu Z, Wang S, Cui C, Li C and Tang W 2017 ACS Appl. Mater. Interfaces 9 1619 doi: 10.1021/acsami.6b13771
[32]	Wu Z P, Jiao L, Wang X L, Guo D Y, Li W H, Li L H, Huang F and Tang W H 2017 J. Mater. Chem. C 5 8688 doi: 10.1039/C7TC01741C
[33]	Zhao B, Fei W, Chen H, Wang Y, Jiang M, Fang X and Zhao D 2015 Nano Lett. 15 3988 doi: 10.1021/acs.nanolett.5b00906
[34]	Zhang L, Li Q, Shang L, Zhang Z, Huang R and Zhao F J 2012 J. Phys. D: Appl. Phys. 45 485103 doi: 10.1088/0022-3727/45/48/485103
[35]	Guo D Y, Wu Z P, An Y H, Guo X C, Chu X L, Sun C L, Li L H, Li P G and Tang W H 2014 Appl. Phys. Lett. 105 023507 doi: 10.1063/1.4890524

Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions

Rectifying characteristics and solar-blind photoresponse in β-Ga₂O₃/ZnO heterojunctions

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