Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

doi:10.1088/1674-1056/26/8/086201

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 86201-086201.doi: 10.1088/1674-1056/26/8/086201

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

收稿日期:2017-02-27 修回日期:2017-04-30 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Fa-Jun Li E-mail:lifajun1201@gmail.com

Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

Received:2017-02-27 Revised:2017-04-30 Online:2017-08-05 Published:2017-08-05
Contact: Fa-Jun Li E-mail:lifajun1201@gmail.com
About author:0.1088/1674-1056/26/8/

摘要/Abstract

摘要：

To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core-shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0×10¹² cm^-2 to 3.0×10¹³ cm^-2. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley-Read-Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.

关键词: radiation effect, minority carrier lifetime, defect concentration, radiation damage

Abstract:

Key words: radiation effect, minority carrier lifetime, defect concentration, radiation damage

中图分类号: (Nanowires)

62.23.Hj

61.72.-y (Defects and impurities in crystals; microstructure) 61.80.-x (Physical radiation effects, radiation damage) 61.80.Jh (Ion radiation effects)

谭立英, 黎发军, 谢小龙, 周彦平, 马晶. Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique[J]. 中国物理B, 2017, 26(8): 86201-086201.

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶). Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique[J]. Chin. Phys. B, 2017, 26(8): 86201-086201.

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Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

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