中国物理B ›› 2018, Vol. 27 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/27/3/038502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Haibin Huang(黄海宾), Gangyu Tian(田罡煜), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Wolfgang R. Fahrner, Wenbin Zhang(张闻斌), Xingbing Li(李杏兵), Wenhao Chen(陈文浩), Renzhong Liu(刘仁中)
Haibin Huang(黄海宾)1, Gangyu Tian(田罡煜)1, Lang Zhou(周浪)1, Jiren Yuan(袁吉仁)1,2, Wolfgang R. Fahrner1, Wenbin Zhang(张闻斌)3, Xingbing Li(李杏兵)3, Wenhao Chen(陈文浩)4, Renzhong Liu(刘仁中)4
摘要:
A novel structure of Ag grid/SiNx/n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid was designed to increase the efficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifacial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current (Jsc), while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the Jsc of 41.7 mA/cm2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm2. We conclude that the configuration of the Ag grid/SiNx/n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid is a promising structure for high efficiency and low cost.
中图分类号: (Semiconductor-device characterization, design, and modeling)