中国物理B ›› 2018, Vol. 27 ›› Issue (11): 117802-117802.doi: 10.1088/1674-1056/27/11/117802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO

Ai-Hua Tang(汤爱华), Zeng-Xia Mei(梅增霞), Yao-Nan Hou(侯尧楠), Xiao-Long Du(杜小龙)   

  1. 1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-05-22 修回日期:2018-09-02 出版日期:2018-11-05 发布日期:2018-11-05
  • 通讯作者: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280).

Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO

Ai-Hua Tang(汤爱华)1,2, Zeng-Xia Mei(梅增霞)1, Yao-Nan Hou(侯尧楠)1, Xiao-Long Du(杜小龙)1,2   

  1. 1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-05-22 Revised:2018-09-02 Online:2018-11-05 Published:2018-11-05
  • Contact: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280).

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摘要：

The wide-band-gap II-VI compound semiconductor ZnO is regarded as a promising single-photon emission (SPE) host material. In this work, we demonstrate that a (GaZn-VZn)- complex defect can readily be obtained and the density can be controlled in a certain range. In analogy to nitrogen vacancy centers, such a defect in ZnO is expected to be a new single photon source. The optical properties of the (GaZn-VZn)- complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements. The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10-20 nanoseconds, indicating a good coherent length for SPE. Finally, a two-level emitter structure is proposed to explain the carrier dynamics. We believe that the photodynamics study of the (GaZn-VZn)- complex defect in this work is important for ZnO-based quantum emitters.

关键词: (GaZn-VZn)- complex defect, photoluminescence, time-resolved photoluminescence

Abstract:

The wide-band-gap II-VI compound semiconductor ZnO is regarded as a promising single-photon emission (SPE) host material. In this work, we demonstrate that a (GaZn-VZn)- complex defect can readily be obtained and the density can be controlled in a certain range. In analogy to nitrogen vacancy centers, such a defect in ZnO is expected to be a new single photon source. The optical properties of the (GaZn-VZn)- complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements. The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10-20 nanoseconds, indicating a good coherent length for SPE. Finally, a two-level emitter structure is proposed to explain the carrier dynamics. We believe that the photodynamics study of the (GaZn-VZn)- complex defect in this work is important for ZnO-based quantum emitters.

Key words: (GaZn-VZn)- complex defect, photoluminescence, time-resolved photoluminescence

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
71.55.-i (Impurity and defect levels) 78.55.Et (II-VI semiconductors) 61.72.J- (Point defects and defect clusters)