中国物理B ›› 2017, Vol. 26 ›› Issue (6): 67702-067702.doi: 10.1088/1674-1056/26/6/067702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering

Tang-Liu Yan(阎堂柳), Bin Chen(陈斌), Gang Liu(刘钢), Rui-Peng Niu(牛瑞鹏), Jie Shang(尚杰), Shuang Gao(高双), Wu-Hong Xue(薛武红), Jing Jin(金晶), Jiu-Ru Yang(杨九如), Run-Wei Li(李润伟)   

  1. 1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
    2 Electrical Engineering College, Heilongjiang University, Harbin 150080, China;
    3 Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    4 Zhejiang Provincial Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 收稿日期:2017-01-11 修回日期:2017-02-25 出版日期:2017-06-05 发布日期:2017-06-05
  • 通讯作者: Bin Chen, Jing Jin, Jiu-Ru Yang E-mail:chenbin@nimte.ac.cn;jjin@shu.edu.cn;yangjr@hlju.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).

Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering

Tang-Liu Yan(阎堂柳)1,3,4, Bin Chen(陈斌)3,4, Gang Liu(刘钢)3,4, Rui-Peng Niu(牛瑞鹏)2, Jie Shang(尚杰)3,4, Shuang Gao(高双)3,4, Wu-Hong Xue(薛武红)3,4, Jing Jin(金晶)1, Jiu-Ru Yang(杨九如)2, Run-Wei Li(李润伟)3,4   

  1. 1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
    2 Electrical Engineering College, Heilongjiang University, Harbin 150080, China;
    3 Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    4 Zhejiang Provincial Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • Received:2017-01-11 Revised:2017-02-25 Online:2017-06-05 Published:2017-06-05
  • Contact: Bin Chen, Jing Jin, Jiu-Ru Yang E-mail:chenbin@nimte.ac.cn;jjin@shu.edu.cn;yangjr@hlju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274322, 51402318, 61404080, and 61675066), the National Key Technology Research and Development Program of China (Grant No. 2016YFA0201102), and the China Postdoctoral Science Foundation (Grant No. 2016LH0050).

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摘要：

As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications, since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi(Fe, Mn)O3 thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage, ferroelectric and photovoltaic characteristics of Bi(Fe, Mn)O3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi(Fe, Mn)O3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi(Fe, Mn)O3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe0.7Mn0.3O3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO3/Nb-STO capacitor. The improvement of photovoltaic response in Bi(Fe, Mn)O3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.

关键词: band gap engineering, BiFeO3, Mn doping, ferroelectric, photovoltaic effect

Abstract:

As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications, since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi(Fe, Mn)O3 thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage, ferroelectric and photovoltaic characteristics of Bi(Fe, Mn)O3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi(Fe, Mn)O3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi(Fe, Mn)O3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe0.7Mn0.3O3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO3/Nb-STO capacitor. The improvement of photovoltaic response in Bi(Fe, Mn)O3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.

Key words: band gap engineering, BiFeO3, Mn doping, ferroelectric, photovoltaic effect

中图分类号:  (Other ferroelectric films)

  • 77.55.fp
42.70.Qs (Photonic bandgap materials) 77.90.+k (Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties) 85.60.-q (Optoelectronic devices)