中国物理B ›› 2017, Vol. 26 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/26/3/038503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

Yin Tang(汤寅), Qing Cai(蔡青), Lian-Hong Yang(杨莲红), Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓)   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 Department of Physics, Changji College, Changji 831100, China;
    3 School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou 239000, China
  • 收稿日期:2016-06-11 修回日期:2016-12-12 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: Dun-Jun Chen E-mail:djchen@nju.edu.cn
  • 基金资助:

    Project supported by the State Key Project of Research and Development Plan, China (Grant No. 2016YFB0400903), the National Natural Science Foundation of China (Grant Nos. 61634002, 61274075, and 61474060), the Key Project of Jiangsu Province, China (Grant No. BE2016174), the Anhui University Natural Science Research Project, China (Grant No. KJ2015A153), the Open Fund (KFS) of State Key Lab of Optical Technologieson Nanofabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Science.

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

Yin Tang(汤寅)1, Qing Cai(蔡青)1, Lian-Hong Yang(杨莲红)2, Ke-Xiu Dong(董可秀)3, Dun-Jun Chen(陈敦军)1, Hai Lu(陆海)1, Rong Zhang(张荣)1, You-Dou Zheng(郑有炓)1   

  1. 1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 Department of Physics, Changji College, Changji 831100, China;
    3 School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou 239000, China
  • Received:2016-06-11 Revised:2016-12-12 Online:2017-03-05 Published:2017-03-05
  • Contact: Dun-Jun Chen E-mail:djchen@nju.edu.cn
  • Supported by:

    Project supported by the State Key Project of Research and Development Plan, China (Grant No. 2016YFB0400903), the National Natural Science Foundation of China (Grant Nos. 61634002, 61274075, and 61474060), the Key Project of Jiangsu Province, China (Grant No. BE2016174), the Anhui University Natural Science Research Project, China (Grant No. KJ2015A153), the Open Fund (KFS) of State Key Lab of Optical Technologieson Nanofabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Science.

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摘要：

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.

关键词: AlGaN, deep ultraviolet, photoelectric detector, distributed Bragg reflector

Abstract:

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.

Key words: AlGaN, deep ultraviolet, photoelectric detector, distributed Bragg reflector

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
85.60.Bt (Optoelectronic device characterization, design, and modeling)