中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/25/11/117701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Threshold resistance switching in silicon-rich SiOx thin films

Da Chen(陈达), Shi-Hua Huang(黄仕华)   

  1. Physics Department, Zhejiang Normal University, Zhejiang 321004, China
  • 收稿日期:2016-04-21 修回日期:2016-06-05 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Shi-Hua Huang E-mail:huangshihua@zjnu.cn
  • 基金资助:
    Project supported by the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. KF2015 02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (Grant No. M201503), Zhejiang Provincial Science and Technology Key Innovation Team, China (Grant No. 2011R50012), and Zhejiang Provincial Key Laboratory, China (Grant No. 2013E10022).

Threshold resistance switching in silicon-rich SiOx thin films

Da Chen(陈达), Shi-Hua Huang(黄仕华)   

  1. Physics Department, Zhejiang Normal University, Zhejiang 321004, China
  • Received:2016-04-21 Revised:2016-06-05 Online:2016-11-05 Published:2016-11-05
  • Contact: Shi-Hua Huang E-mail:huangshihua@zjnu.cn
  • Supported by:
    Project supported by the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. KF2015 02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (Grant No. M201503), Zhejiang Provincial Science and Technology Key Innovation Team, China (Grant No. 2011R50012), and Zhejiang Provincial Key Laboratory, China (Grant No. 2013E10022).

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摘要： Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment. The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films, which was caused by the formation of clusters due to the local overheating under a large electric field. Besides, the I-V characteristics of the threshold switching showed a dependence on the annealing temperature and the SiOx thickness. In particular, formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiOx film, while for the 78 nm-SiOx film, adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable. This study demonstrates the importance of investigation of both switching modes in resistance random access memory.

关键词: threshold resistance switching, silicon-rich SiOx thin film, annealing

Abstract: Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment. The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films, which was caused by the formation of clusters due to the local overheating under a large electric field. Besides, the I-V characteristics of the threshold switching showed a dependence on the annealing temperature and the SiOx thickness. In particular, formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiOx film, while for the 78 nm-SiOx film, adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable. This study demonstrates the importance of investigation of both switching modes in resistance random access memory.

Key words: threshold resistance switching, silicon-rich SiOx thin film, annealing

中图分类号:  (Switching phenomena)

  • 77.80.Fm
61.72.Bb (Theories and models of crystal defects) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)